Product Datasheet Search Results:
4 Pages, 293 KB, Original- 2SK879-Y(TE85L,F)
- Toshiba
- Trans JFET N-CH Si 3-Pin USM T/R
Product Details Search Results:
Toshiba.co.jp/2SK879-Y(TE85L,F)
{"Factory Pack Quantity":"3000","Vds - Drain-Source Breakdown Voltage":"10 V","Transistor Polarity":"N-Channel","Brand":"Toshiba","Id - Continuous Drain Current":"6.5 mA","Mounting Style":"SMD/SMT","Pd - Power Dissipation":"100 mW","Packaging":"Reel","Product Category":"JFET","Package / Case":"SC-70-3","Drain-Source Current at Vgs=0":"1.2 mA","Vgs - Gate-Source Breakdown Voltage":"- 30 V","Configuration":"Single","Gate-Source Cutoff Voltage":"- 5 V","RoHS":"Details","Manufacturer":"Toshiba"}...
1669 Bytes - 06:04:28, 29 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| SK32SK310.pdf | 0.14 | 1 | Request | |
| SK12SK110.pdf | 0.13 | 1 | Request | |
| SK22SK210.pdf | 0.13 | 1 | Request | |
| SS5Y3-12SKAN-16B-N.pdf | 67.31 | 1 | Request | |
| SS5Y3-12SKAN-08U-D.pdf | 67.31 | 1 | Request | |
| SS5Y5-12SKAN-06B-ND.pdf | 67.31 | 1 | Request | |
| 6AG3111-2SK30-0AB0-ZD30D61M10S10.pdf | 8.78 | 1 | Request | |
| 6AG3111-2SK30-0AB0-ZM10.pdf | 8.78 | 1 | Request | |
| 6AG3111-2SK30-0AB0-ZD61S10.pdf | 8.78 | 1 | Request | |
| 6AG3111-2SK30-0AB0-ZD61M10.pdf | 8.78 | 1 | Request | |
| 7KG6101-2SK10.pdf | 1.28 | 1 | Request | |
| 6AG3111-2SK30-0AB0-ZD30.pdf | 8.78 | 1 | Request |
