Product Datasheet Search Results:
4 Pages, 197 KB, Original- 2SK3687-01MR
- Fuji Electric Corp. Of America
- 16 A, 600 V, 0.57 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Product Details Search Results:
Fujielectric.co.jp/2SK3687-01MR
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"2.16 W","Avalanche Energy Rating (Eas)":"243 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"16 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.5700 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"64 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICOND...
1555 Bytes - 04:31:07, 28 November 2024
Documentation and Support
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| File Name | File Size (MB) | Document | MOQ | Support |
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| 2SK3687-01MR.pdf | 0.18 | 1 | Request |
