Product Datasheet Search Results:
4 Pages, 244 KB, Original- 2SK3646-01L
- Fuji Electric
- 2SK3646-01L
Product Details Search Results:
Fujielectric.co.jp/2SK3646-01L
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1.67 W","Avalanche Energy Rating (Eas)":"205 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"41 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0440 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"164 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICON...
1518 Bytes - 03:36:08, 28 November 2024
Documentation and Support
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| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 2SK3646-01L.pdf | 0.24 | 1 | Request |
