Datasheet.Directory

{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"2.02 W","Avalanche Energy Rating (Eas)":"270 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"7 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"2 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"28 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR"...

{"Category":"Power MOSFET","Dimensions":"10 x 4.5 x 15 mm","Maximum Continuous Drain Current":"\u00b17 A","Width":"4.5 mm","Maximum Drain Source Voltage":"900 V","Package Type":"TO-220AB","Number of Elements per Chip":"1","Configuration":"Single","Maximum Operating Temperature":"+150 \u00b0C","Typical Gate Charge @ Vgs":"25 nC @ 10 V","Operating Temperature Range":"-55 to +150 \u00b0C","Typical Turn On Delay Time":"22 ns","Channel Type":"N","Typical Input Capacitance @ Vds":"920 pF @ 25 V","Length":"10 mm",...