Product Datasheet Search Results:

2SK3147L-E.pdf9 Pages, 88 KB, Original
2SK3147L-E
Renesas Technology / Hitachi Semiconductor
Silicon N Channel MOS FET High Speed Power Switching
2SK3147L-E.pdf11 Pages, 234 KB, Original
2SK3147L-E
Renesas Electronics
5 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET

Product Details Search Results:

Renesas.com/2SK3147L-E
{"Terminal Finish":"TIN BISMUTH","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"20 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR",...
1481 Bytes - 18:57:09, 27 November 2024

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