Product Datasheet Search Results:

2SK3147(L).pdf9 Pages, 88 KB, Original
2SK3147(L)
Renesas Technology / Hitachi Semiconductor
Silicon N Channel MOS FET High Speed Power Switching
2SK3147(L).pdf12 Pages, 58 KB, Original
2SK3147(L)
Renesas Electronics
5 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET

Product Details Search Results:

Renesas.com/2SK3147(L)
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"DPAK-3","Pulsed Drain Current-Max (IDM)":"20 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"IN-LINE","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"5 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shap...
1404 Bytes - 18:15:30, 27 November 2024

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