Product Datasheet Search Results:
3 Pages, 120 KB, Original- 2SK298
- Hitachi Semiconductor
- Silicon N-Channel MOSFET
7 Pages, 76 KB, Original- 2SK2980
- Renesas Technology / Hitachi Semiconductor
- Silicon N Channel MOS FET High Speed Power Switching
7 Pages, 76 KB, Original- 2SK2980ZZ-TR-E
- Renesas Technology / Hitachi Semiconductor
- Silicon N Channel MOS FET High Speed Power Switching
399 Pages, 2928 KB, Original- 2SK2981
- Nec Electronics
- Semiconductor Selection Guide
8 Pages, 59 KB, Original- 2SK2981-E1
- Nec Electronics
- Power MOSFET
8 Pages, 59 KB, Original- 2SK2981-E2
- Nec Electronics
- Power MOSFET
8 Pages, 59 KB, Original- 2SK2981-T1
- Nec Electronics
- Power MOSFET
8 Pages, 59 KB, Original- 2SK2981-T2
- Nec Electronics
- Power MOSFET
8 Pages, 59 KB, Original- 2SK2981-Z
- Nec Electronics
- SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
399 Pages, 2928 KB, Original- 2SK2982
- Nec Electronics
- Semiconductor Selection Guide
Product Details Search Results:
Necel.com/2SK2983S
{"C(iss) Max. (F)":"1.2u","Absolute Max. Power Diss. (W)":"1.5","@Pulse Width (s) (Condition)":"10u","@V(GS) (V) (Test Condition)":"4.5","t(d)off Max. (s) Off time":"100n","r(DS)on Max. (Ohms)":"27m","@V(DS) (V) (Test Condition)":"10","I(DM) Max (A)(@25°C)":"120","I(GSS) Max. (A)":"10u","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"15","@Freq. (Hz) (Test Condition)":"1.0M","Package":"TO-262AA","Military":"N","td(on) Max (s) On time delay":"50n","I(DSS) Max. (A)":"10u","t(r) Max. (s) Rise time":"820...
1124 Bytes - 13:17:45, 25 November 2024
Necel.com/2SK2983ZJ
{"C(iss) Max. (F)":"1.2u","Absolute Max. Power Diss. (W)":"1.5","@Pulse Width (s) (Condition)":"10u","@V(GS) (V) (Test Condition)":"4.5","t(d)off Max. (s) Off time":"100n","r(DS)on Max. (Ohms)":"27m","@V(DS) (V) (Test Condition)":"10","I(DM) Max (A)(@25°C)":"120","I(GSS) Max. (A)":"10u","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"15","@Freq. (Hz) (Test Condition)":"1.0M","Package":"TO-263AB","Military":"N","td(on) Max (s) On time delay":"50n","I(DSS) Max. (A)":"10u","t(r) Max. (s) Rise time":"820...
1130 Bytes - 13:17:45, 25 November 2024
Necel.com/2SK2984S
{"C(iss) Max. (F)":"2.6n","Absolute Max. Power Diss. (W)":"1.5","@Pulse Width (s) (Condition)":"10u","@V(GS) (V) (Test Condition)":"4.5","t(d)off Max. (s) Off time":"210n","r(DS)on Max. (Ohms)":"13m","@V(DS) (V) (Test Condition)":"10","I(DM) Max (A)(@25°C)":"160","I(GSS) Max. (A)":"10u","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"20","@Freq. (Hz) (Test Condition)":"1.0M","Package":"TO-262AA","Military":"N","td(on) Max (s) On time delay":"70n","I(DSS) Max. (A)":"10u","t(r) Max. (s) Rise time":"1.1...
1124 Bytes - 13:17:45, 25 November 2024
Necel.com/2SK2984ZJ
{"C(iss) Max. (F)":"2.6n","Absolute Max. Power Diss. (W)":"1.5","@Pulse Width (s) (Condition)":"10u","@V(GS) (V) (Test Condition)":"4.5","t(d)off Max. (s) Off time":"210n","r(DS)on Max. (Ohms)":"13m","@V(DS) (V) (Test Condition)":"10","I(DM) Max (A)(@25°C)":"160","I(GSS) Max. (A)":"10u","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"20","@Freq. (Hz) (Test Condition)":"1.0M","Package":"TO-263AB","Military":"N","td(on) Max (s) On time delay":"70n","I(DSS) Max. (A)":"10u","t(r) Max. (s) Rise time":"1.1...
1130 Bytes - 13:17:45, 25 November 2024
Renesas.com/2SK2980ZZ-TL(E)
{"Polarity":"N","Gate-Source Voltage (Max)":"12(V)","Channel Mode":"Enhancement","Power Dissipation":"0.8(W)","Continuous Drain Current":"1(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"30(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"MPAK","Type":"Power MOSFET","Pin Count":"3","Number of Elements":"1"}...
1502 Bytes - 13:17:45, 25 November 2024
Toshiba.co.jp/2SK2985
1058 Bytes - 13:17:45, 25 November 2024
Toshiba.co.jp/2SK2989
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"LEAD FREE, 2-5J1C, TO-92MOD, 3 PIN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"0.9000 W","Package Style":"CYLINDRICAL","Transistor Application":"SWITCHING","Operating Mode":"ENHANCEMENT","Drain Current-Max (ID)":"5 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor ...
1488 Bytes - 13:17:45, 25 November 2024
Toshiba.co.jp/2SK2989(F)
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"5(A)","Mounting":"Through Hole","Operating Temp Range":"-55C to 150C","Drain-Source On-Volt":"50(V)","Power Dissipation":"0.9(W)","Rad Hardened":"No","Package Type":"TO-92 Mod","Type":"Power MOSFET","Pin Count":"3","Number of Elements":"1"}...
1405 Bytes - 13:17:45, 25 November 2024
Toshiba.co.jp/2SK2989.F(J
820 Bytes - 13:17:45, 25 November 2024
Toshiba.co.jp/2SK2989(TPE6,F,M)
958 Bytes - 13:17:45, 25 November 2024
Various/2SK298
{"C(iss) Max. (F)":"800p","Absolute Max. Power Diss. (W)":"100","g(fs) Max, (S) Trans. conduct,":"1.7","r(DS)on Max. (Ohms)":"1.1","@V(DS) (V) (Test Condition)":"10","I(GSS) Max. (A)":"1.0u","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"4.0","@(VDS) (V) (Test Condition)":"20","Package":"TO-3","I(DSS) Min. (A)":"1.0m","Military":"N","t(r) Max. (s) Rise time":"35n","V(BR)DSS (V)":"400","t(f) Max. (s) Fall time.":"35n","g(fs) Min. (S) Trans. conduct.":"1.2","I(D) Abs. Drain Current (A)":"8.0"}...
952 Bytes - 13:17:45, 25 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 2SK2989.pdf | 0.23 | 1 | Request |
