Product Datasheet Search Results:
8 Pages, 83 KB, Original- 2SK2958(S)
- Renesas Technology / Hitachi Semiconductor
- Silicon N Channel MOS FET High Speed Power Switching
11 Pages, 55 KB, Original- 2SK2958(S)
- Renesas Electronics
- 0.014 ohm, POWER, FET
1 Pages, 101 KB, Scan- 2SK2958(S)TL
- Renesas Electronics
- 75 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Renesas.com/2SK2958(S)
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"LDPAK-3","Terminal Form":"GULL WING","Package Style":"SMALL OUTLINE","Drain-source On Resistance-Max":"0.0140 ohm","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Number of Terminals":"2","Surface Mount":"Yes"}...
1020 Bytes - 06:37:13, 22 November 2024
Renesas.com/2SK2958(S)TL
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"75 A","Transistor Application":"SWITCHING","Number of Elements":"1","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"SINGLE","Drain-source On Resistance-Ma...
1321 Bytes - 06:37:13, 22 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 2SK2953.pdf | 0.42 | 1 | Request |
