Datasheet.Directory

{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.1000 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.0500 A","Configuration":"SINGLE WITH BUILT-IN DIODE AND RESISTOR","Drain-source On Resistance-Max":"40 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min"...

{"Category":"MOSFET","Maximum Drain Source Voltage":"20 V","Description":"Value","Maximum Continuous Drain Current":"0.05 A","Package":"3USM","Mounting":"Surface Mount","Maximum Gate Source Voltage":"10 V","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"40000@2.5V mOhm","Manufacturer":"Toshiba"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"10(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"0.05(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"20(V)","Pin Count":"3","Packaging":"Tape and Reel","Power Dissipation":"0.1(W)","Operating Temp Range":"-55C to 150C","Package Type":"USM","Rad Hardened":"No","Type":"Small Signal","Drain-Source On-Res":"40(ohm)","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate, 2.5V Drive","Online Catalog":"N-Channel Logic Level Gate FETs","Product Photos":"SC-70, SOT-323 PKG","Family":"FETs - Single","Vgs(th) (Max) @ Id":"-","Input Capacitance (Ciss) @ Vds":"5.5pF @ 3V","Series":"-","Standard Package":"3,000","Supplier Device Package":"SC-70","Datasheets":"2SK1829 -","Rds On (Max) @ Id, Vgs":"40 Ohm @ 10mA, 2.5V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"1...