2SK1829
50 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

From Toshiba America Electronic Components, Inc.

StatusACTIVE
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE AND RESISTOR
DS Breakdown Voltage-Min20 V
Drain Current-Max (ID)0.0500 A
Drain-source On Resistance-Max40 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Mfr Package Description2-2E1E, SC-70, 3 PIN
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Power Dissipation Ambient-Max0.1000 W
Surface MountYes
Terminal FinishTIN LEAD
Terminal FormGULL WING
Terminal PositionDUAL
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE SMALL SIGNAL

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