Datasheet.Directory

{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"SHORT-LEAD TO-126, 3 PIN","Terminal Form":"THROUGH-HOLE","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"40","Collector-emitter Voltage-Max":"300 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"150 MHz","Collector Current-Max (IC)":"0.1000 A","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Transistor Polarity":"NPN","Package Shape":"RECTANGULAR","Configuration":"SI...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"100mA","DC Current Gain (hFE) (Min) @ Ic, Vce":"40 @ 10mA, 10V","Transistor Type":"NPN","Product Photos":"MJE350STU","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"600mV @ 2mA, 20mA","Current - Collector Cutoff (Max)":"100nA (ICBO)","Series":"-","Standard Package":"1,920","Voltage - Collector Emitter Breakdown (Max)":"300V","Supplier Device Package":"TO-126","Packaging":"Tube","Datasheets":"ACH(2-AT,0-CD)...

{"@I(C) (A) (Test Condition)":"10m","I(CBO) Max. (A)":"0.1u","Absolute Max. Power Diss. (W)":"1.2","I(C) Abs.(A) Collector Current":"100m","h(FE) Max. Current gain.":"80","@V(CE) (V) (Test Condition)":"10","f(T) Min. (Hz) Transition Freq":"150M","V(BR)CEO (V)":"300","Package":"TO-126","h(FE) Min. Static Current Gain":"40","V(BR)CBO (V)":"300","Military":"N"}...

{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Transistor Polarity":"NPN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1.2 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"40","Collector-emitter Voltage-Max":"300 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"150 MHz","Collector Current-Max (IC)":"0.1000 A","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Transistor Type":"GENERAL P...

{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Transistor Polarity":"NPN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1.2 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"40","Collector-emitter Voltage-Max":"300 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"150 MHz","Collector Current-Max (IC)":"0.1000 A","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Transistor Type":"GENERAL P...

{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Transistor Polarity":"NPN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1.2 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"40","Collector-emitter Voltage-Max":"300 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"150 MHz","Collector Current-Max (IC)":"0.1000 A","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Transistor Type":"GENERAL P...

{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Transistor Polarity":"NPN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1.2 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"40","Collector-emitter Voltage-Max":"300 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"150 MHz","Collector Current-Max (IC)":"0.1000 A","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Transistor Type":"GENERAL P...

{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Transistor Polarity":"NPN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1.2 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"40","Collector-emitter Voltage-Max":"300 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"150 MHz","Collector Current-Max (IC)":"0.1000 A","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Transistor Type":"GENERAL P...

{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Transistor Polarity":"NPN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1.2 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"40","Collector-emitter Voltage-Max":"300 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"150 MHz","Collector Current-Max (IC)":"0.1000 A","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Transistor Type":"GENERAL P...