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2SC3421O.pdf4 Pages, 133 KB, Original

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Toshiba.co.jp/2SC3421O
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"ROHS COMPLIANT, 2-8H1A, 3 PIN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1.5 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"80","Collector-emitter Voltage-Max":"120 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"120 MHz","Collector Current-Max (IC)":"1 A","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Transistor Polarity":"NPN","Package ...
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Various/2SC3421O
{"V(CE)sat Max.(V)":"1.0","Absolute Max. Power Diss. (W)":"1.5","V(BR)CBO (V)":"120","@V(CB) (V) (Test Condition)":"10","h(FE) Min. Static Current Gain":"80","I(C) Abs.(A) Collector Current":"1.0","h(FE) Max. Current gain.":"160","@Freq. (Hz) (Test Condition)":"1.0m","I(CBO) Max. (A)":"100n","@V(CBO) (V) (Test Condition)":"120","Package":"TO-126","f(T) Min. (Hz) Transition Freq":"120M","@V(CE) (V) (Test Condition)":"5.0","@I(B) (A) (Test Condition)":"650m","V(BR)CEO (V)":"120","Military":"N","@I(C) (A) (Tes...
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