Product Datasheet Search Results:
4 Pages, 133 KB, Original- 2SC3421
- Toshiba America Electronic Components, Inc.
- 1 A, 120 V, NPN, Si, POWER TRANSISTOR
4 Pages, 133 KB, Original- 2SC3421-O
- Toshiba America Electronic Components, Inc.
- 1 A, 120 V, NPN, Si, POWER TRANSISTOR
4 Pages, 133 KB, Original- 2SC3421O
- Toshiba America Electronic Components, Inc.
- 1 A, 120 V, NPN, Si, POWER TRANSISTOR
4 Pages, 133 KB, Original- 2SC3421-O(Q)
- Toshiba
- Trans GP BJT NPN 120V 1A 1500mW 3-Pin(3+Tab) TO-126IS
4 Pages, 133 KB, Original- 2SC3421-Y
- Toshiba America Electronic Components, Inc.
- 1 A, 120 V, NPN, Si, POWER TRANSISTOR
4 Pages, 133 KB, Original- 2SC3421Y
- Toshiba America Electronic Components, Inc.
- 1 A, 120 V, NPN, Si, POWER TRANSISTOR
Product Details Search Results:
N_a/2SC3421
{"Category":"NPN Transistor, Transistor","Amps":"1A","MHz":"120 MHz","Volts":"120V"}...
518 Bytes - 04:21:11, 06 October 2024
Toshiba.co.jp/2SC3421
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"ROHS COMPLIANT, 2-8H1A, 3 PIN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1.5 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"80","Collector-emitter Voltage-Max":"120 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"120 MHz","Collector Current-Max (IC)":"1 A","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","T...
1402 Bytes - 04:21:11, 06 October 2024
Toshiba.co.jp/2SC3421-O
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"LEAD FREE, 2-8H1A, 3 PIN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1.5 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"80","Collector-emitter Voltage-Max":"120 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"120 MHz","Collector Current-Max (IC)":"1 A","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Transi...
1411 Bytes - 04:21:11, 06 October 2024
Toshiba.co.jp/2SC3421O
{"Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"ROHS COMPLIANT, 2-8H1A, 3 PIN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1.5 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"80","Collector-emitter Voltage-Max":"120 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"120 MHz","Collector Current-Max (IC)":"1 A","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Transistor Polarity":"NPN","Package...
1372 Bytes - 04:21:11, 06 October 2024
Toshiba.co.jp/2SC3421-O(Q)
{"Collector Current (DC) ":"1(A)","Transistor Polarity":"NPN","Collector-Emitter Voltage":"120(V)","Mounting":"Through Hole","Emitter-Base Voltage":"5(V)","Category ":"Bipolar Power","Power Dissipation":"1.5(W)","Rad Hardened":"No","Frequency":"120(MHz)","Output Power":"Not Required(W)","Collector-Base Voltage":"120(V)","DC Current Gain":"80@100MA@5V","Package Type":"TO-126IS","Configuration":"Single","Pin Count":"3 +Tab","Number of Elements":"1"}...
1437 Bytes - 04:21:11, 06 October 2024
Toshiba.co.jp/2SC3421-Y
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"LEAD FREE, 2-8H1A, 3 PIN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1.5 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"120","Collector-emitter Voltage-Max":"120 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"120 MHz","Collector Current-Max (IC)":"1 A","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Trans...
1410 Bytes - 04:21:11, 06 October 2024
Toshiba.co.jp/2SC3421Y
{"Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"ROHS COMPLIANT, 2-8H1A, 3 PIN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1.5 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"120","Collector-emitter Voltage-Max":"120 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"120 MHz","Collector Current-Max (IC)":"1 A","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Transistor Polarity":"NPN","Packag...
1377 Bytes - 04:21:11, 06 October 2024
Toshiba.co.jp/2SC3421-Y(Q)
{"Collector Current (DC) ":"1(A)","Configuration":"Single","Transistor Polarity":"NPN","Collector Current (DC) (Max)":"1 A","Collector-Emitter Voltage":"120(V)","Mounting":"Through Hole","Emitter-Base Voltage":"5(V)","Category ":"Bipolar Power","DC Current Gain (Min)":"120","Operating Temperature Classification":"Military","Power Dissipation":"1.5(W)","Operating Temp Range":"-55C to 150C","Frequency":"120(MHz)","Package Type":"TO-126IS","Collector-Base Voltage":"120(V)","Rad Hardened":"No","Output Power":"N...
1652 Bytes - 04:21:11, 06 October 2024
Various/2SC3421O
{"V(CE)sat Max.(V)":"1.0","Absolute Max. Power Diss. (W)":"1.5","V(BR)CBO (V)":"120","@V(CB) (V) (Test Condition)":"10","h(FE) Min. Static Current Gain":"80","I(C) Abs.(A) Collector Current":"1.0","h(FE) Max. Current gain.":"160","@Freq. (Hz) (Test Condition)":"1.0m","I(CBO) Max. (A)":"100n","@V(CBO) (V) (Test Condition)":"120","Package":"TO-126","f(T) Min. (Hz) Transition Freq":"120M","@V(CE) (V) (Test Condition)":"5.0","@I(B) (A) (Test Condition)":"650m","V(BR)CEO (V)":"120","Military":"N","@I(C) (A) (Tes...
1012 Bytes - 04:21:11, 06 October 2024
Various/2SC3421Y
{"V(CE)sat Max.(V)":"1.0","Absolute Max. Power Diss. (W)":"1.5","V(BR)CBO (V)":"120","@V(CB) (V) (Test Condition)":"10","h(FE) Min. Static Current Gain":"120","I(C) Abs.(A) Collector Current":"1.0","h(FE) Max. Current gain.":"240","@Freq. (Hz) (Test Condition)":"1.0M","I(CBO) Max. (A)":"100n","@V(CBO) (V) (Test Condition)":"120","Package":"TO-126","f(T) Min. (Hz) Transition Freq":"120M","@V(CE) (V) (Test Condition)":"5.0","@I(B) (A) (Test Condition)":"50m","V(BR)CEO (V)":"120","Military":"N","@I(C) (A) (Tes...
1012 Bytes - 04:21:11, 06 October 2024
