Datasheet.Directory

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.4000 W","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2000 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor ...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.4000 W","Package Shape":"UNSPECIFIED","Status":"DISCONTINUED","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2000 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V"...

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"ROHS COMPLIANT, PLASTIC, 10D3, 3 PIN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.3500 W","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Operating Mode":"ENHANCEMENT","Drain Current-Max (ID)":"0.2000 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"ROUND","Configurat...

{"Polarity":"N","Gate-Source Voltage (Max)":"\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"0.35(W)","Continuous Drain Current":"0.2(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"60(V)","Packaging":"Ammo Pack","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"TO-92","Type":"Small Signal","Pin Count":"3","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"3V @ 1mA","Package / Case":"TO-226-3, TO-92-3 (TO-226AA)","Current - Continuous Drain (Id) @ 25\u00b0C":"200mA (Ta)","Gate Charge (Qg) @ Vgs":"-","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","PCN Assembly/Origin":"Assembly/Test Site Transfer 14/Apr/2015","Product Training Modules":"High Voltage Switches for Power Processing","Rds On (Max) @ Id, Vgs":"5 Ohm @ 500mA, 10V","Datasheets":"2N7000/02, NDS70...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Online Catalog":"N-Channel Standard FETs","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"FETs - Single","Vgs(th) (Max) @ Id":"3V @ 1mA","Series":"-","Standard Package":"1,000","Supplier Device Package":"TO-92-3","Product Training Modules":"High Voltage Switches for Power Processing","Datasheets":"2N7000/02, NDS7002A Datasheet","Rds On (Max) @ Id, Vgs":"5 Ohm @ 500mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide...

{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Number of Terminals":"3","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"0.2000 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"ROUND","Configuration":"SINGLE","Drain-source On Resistance-Max":"5 ohm","Package Sty...

{"Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Number of Terminals":"3","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"0.2000 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"ROUND","Configuration":"SINGLE","Drain-source On Resistance-Max":"5 ohm",...

{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Number of Terminals":"3","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"0.2000 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"ROUND","Configuration":"SINGLE","Drain-source On Resistance-Max":"5 ohm","Package Sty...

{"Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Number of Terminals":"3","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"0.2000 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"ROUND","Configuration":"SINGLE","Drain-source On Resistance-Max":"5 ohm",...

{"Status":"ACTIVE-UNCONFIRMED","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-92, 3 PIN","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"0.2000 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"ROUND","Configuration":"SING...

{"Status":"ACTIVE-UNCONFIRMED","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-92, 3 PIN","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"0.2000 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"ROUND","Configuration":"SING...