Product Datasheet Search Results:

2N6800U.pdf23 Pages, 167 KB, Original
JAN2N6800U.pdf23 Pages, 167 KB, Original
JANHC2N6800U.pdf23 Pages, 167 KB, Original
JANKC2N6800U.pdf23 Pages, 167 KB, Original
JANS2N6800U.pdf23 Pages, 167 KB, Original
JANTX2N6800U.pdf23 Pages, 167 KB, Original
JANTXV2N6800U.pdf23 Pages, 167 KB, Original
2N6800UJANTX.pdf7 Pages, 164 KB, Original
2N6800UJANTX
International Rectifier
Trans MOSFET N-CH 400V 3A 18-Pin LLCC
2N6800UJANTXV.pdf7 Pages, 164 KB, Original
2N6800UJANTXV
International Rectifier
Trans MOSFET N-CH 400V 3A 18-Pin LLCC

Product Details Search Results:

Irf.com/2N6800UJANTX
{"Category":"MOSFET","Maximum Drain Source Voltage":"400 V","Typical Rise Time":"35(Max) ns","Typical Turn-Off Delay Time":"55(Max) ns","Description":"Value","Maximum Continuous Drain Current":"3 A","Package":"18LLCC","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"30(Max) ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 125 \u00b0C","RDS-on":"1150@10V mOhm","Manufacturer":"International Rectifier"}...
1375 Bytes - 05:12:59, 11 November 2024
Irf.com/2N6800UJANTXV
{"Category":"MOSFET","Maximum Drain Source Voltage":"400 V","Typical Rise Time":"35(Max) ns","Typical Turn-Off Delay Time":"55(Max) ns","Description":"Value","Maximum Continuous Drain Current":"3 A","Package":"18LLCC","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"30(Max) ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 125 \u00b0C","RDS-on":"1150@10V mOhm","Manufacturer":"International Rectifier"}...
1381 Bytes - 05:12:59, 11 November 2024
Irf.com/JANTX2N6800U
{"Terminal Finish":"TIN LEAD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"0.5100 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.15 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"12 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDU...
1544 Bytes - 05:12:59, 11 November 2024
Irf.com/JANTXV2N6800U
{"Terminal Finish":"TIN LEAD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"0.5100 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.15 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"12 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDU...
1552 Bytes - 05:12:59, 11 November 2024
Microsemi.com/2N6800U
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"1 Ohm @ 2A, 10V","FET Feature":"Standard","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Package / Case":"18-BQFN Exposed Pad","Supplier Device Package":"18-ULCC (9.14x7.49)","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6796,98U, 6800,02U","Power - Max":"800mW","Standard Package":"1","Drain to Source Voltage (Vdss)":"400V","Current - Continuo...
1578 Bytes - 05:12:59, 11 November 2024
Microsemi.com/JAN2N6800U
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"1.1 Ohm @ 3A, 10V","FET Feature":"Standard","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500/557","Package / Case":"18-BQFN Exposed Pad","Supplier Device Package":"18-ULCC (9.14x7.49)","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6796,98U, 6800,02U","Power - Max":"800mW","Standard Package":"1","Drain to Source Voltage (Vdss)...
1582 Bytes - 05:12:59, 11 November 2024
Microsemi.com/JANTX2N6800U
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"1.1 Ohm @ 3A, 10V","FET Feature":"Standard","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500/557","Package / Case":"18-BQFN Exposed Pad","Supplier Device Package":"18-ULCC (9.14x7.49)","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6796,98U, 6800,02U","Power - Max":"800mW","Standard Package":"1","Drain to Source Voltage (Vdss)...
1593 Bytes - 05:12:59, 11 November 2024
Microsemi.com/JANTXV2N6800U
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"1.1 Ohm @ 3A, 10V","FET Feature":"Standard","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500/557","Package / Case":"18-BQFN Exposed Pad","Supplier Device Package":"18-ULCC (9.14x7.49)","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6796,98U, 6800,02U","Power - Max":"800mW","Standard Package":"1","Drain to Source Voltage (Vdss)...
1601 Bytes - 05:12:59, 11 November 2024

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