Product Datasheet Search Results:

2N6755.pdf5 Pages, 138 KB, Scan
2N6755
Fairchild Semiconductor
N-Channel Power MOSFETs, 14 A, 60 A/100 V
2N6755.pdf1 Pages, 31 KB, Scan
2N6755
Motorola
European Master Selection Guide 1986
2N6755.pdf4 Pages, 117 KB, Scan
2N6755
General Electric Solid State
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A.
2N6755.pdf4 Pages, 124 KB, Scan
2N6755
Harris Semiconductor
Power MOSFET Data Book 1990
2N6755.pdf12 Pages, 1094 KB, Original
2N6755
Ixys Corporation
High Voltage Power MOSFETs
2N6755.pdf3 Pages, 174 KB, Scan
2N6755
N/a
FET Data Book
2N6755.pdf1 Pages, 32 KB, Original
2N6755.pdf1 Pages, 55 KB, Scan
2N6755
Semelab Plc.
12 A, 60 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3
2N6755.pdf1 Pages, 42 KB, Scan
2N6755
Siliconix
MOSPOWER Design Data Book 1983

Product Details Search Results:

Semelab.co.uk/2N6755
{"Status":"ACTIVE","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"PIN/PEG","Operating Mode":"ENHANCEMENT","Number of Terminals":"2","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"12 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.2500 ohm","Package Style":"FLANGE MOUNT","DS Breakdown Voltage-Min":"60 V","Nu...
1207 Bytes - 20:20:28, 16 November 2024

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