Product Datasheet Search Results:
4 Pages, 236 KB, Original- 2N6660C4A
- Semelab Plc.
- 1000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
4 Pages, 236 KB, Original- 2N6660C4A-JQRS
- Semelab Plc.
- 1000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
4 Pages, 236 KB, Original- 2N6660C4A-JQRS.CVB
- Semelab Plc.
- 1000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
4 Pages, 236 KB, Original- 2N6660C4A-JQRS.CVP
- Semelab Plc.
- 1000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
4 Pages, 236 KB, Original- 2N6660C4A-JQRS.DA
- Semelab Plc.
- 1000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
4 Pages, 236 KB, Original- 2N6660C4A-JQRS.GBDM
- Semelab Plc.
- 1000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
4 Pages, 236 KB, Original- 2N6660C4A-JQRS.GCDE
- Semelab Plc.
- 1000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
4 Pages, 236 KB, Original- 2N6660C4A-JQRS.GCDM
- Semelab Plc.
- 1000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
4 Pages, 236 KB, Original- 2N6660C4A-JQRS.GRPB
- Semelab Plc.
- 1000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
4 Pages, 236 KB, Original- 2N6660C4A-JQRS.GRPC
- Semelab Plc.
- 1000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
4 Pages, 236 KB, Original- 2N6660C4A-JQRS.RAD
- Semelab Plc.
- 1000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
4 Pages, 236 KB, Original- 2N6660C4A-JQRS.SEM
- Semelab Plc.
- 1000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Product Details Search Results:
Semelab.co.uk/2N6660C4A
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.7000 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"3 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Surface Mount":"Yes","Mfr Pac...
1415 Bytes - 02:14:52, 17 November 2024
Semelab.co.uk/2N6660C4A-JQRS
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"UNSPECIFIED","Mfr Package Description":"HERMETIC SEALED PACKAGE-18","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.7000 W","Package Style":"CHIP CARRIER","Drain Current-Max (ID)":"1 A","Transistor Element Material":"SILICON","Operating Mode":"ENHANCEMENT","Number of Elements":"1","Feedback Cap-Max (Crss)":"10 pF","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"QUAD","Transistor Type":"GENERAL PURPOSE SMALL...
1412 Bytes - 02:14:52, 17 November 2024
Semelab.co.uk/2N6660C4A-JQRS.CVB
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"UNSPECIFIED","Mfr Package Description":"HERMETIC SEALED PACKAGE-18","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.7000 W","Package Style":"CHIP CARRIER","Drain Current-Max (ID)":"1 A","Transistor Element Material":"SILICON","Operating Mode":"ENHANCEMENT","Number of Elements":"1","Feedback Cap-Max (Crss)":"10 pF","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"QUAD","Transistor Type":"GENERAL PURPOSE SMALL...
1434 Bytes - 02:14:52, 17 November 2024
Semelab.co.uk/2N6660C4A-JQRS.CVP
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"UNSPECIFIED","Mfr Package Description":"HERMETIC SEALED PACKAGE-18","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.7000 W","Package Style":"CHIP CARRIER","Drain Current-Max (ID)":"1 A","Transistor Element Material":"SILICON","Operating Mode":"ENHANCEMENT","Number of Elements":"1","Feedback Cap-Max (Crss)":"10 pF","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"QUAD","Transistor Type":"GENERAL PURPOSE SMALL...
1434 Bytes - 02:14:52, 17 November 2024
Semelab.co.uk/2N6660C4A-JQRS.DA
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"UNSPECIFIED","Mfr Package Description":"HERMETIC SEALED PACKAGE-18","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.7000 W","Package Style":"CHIP CARRIER","Drain Current-Max (ID)":"1 A","Transistor Element Material":"SILICON","Operating Mode":"ENHANCEMENT","Number of Elements":"1","Feedback Cap-Max (Crss)":"10 pF","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"QUAD","Transistor Type":"GENERAL PURPOSE SMALL...
1430 Bytes - 02:14:52, 17 November 2024
Semelab.co.uk/2N6660C4A-JQRS.GBDM
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"UNSPECIFIED","Mfr Package Description":"HERMETIC SEALED PACKAGE-18","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.7000 W","Package Style":"CHIP CARRIER","Drain Current-Max (ID)":"1 A","Transistor Element Material":"SILICON","Operating Mode":"ENHANCEMENT","Number of Elements":"1","Feedback Cap-Max (Crss)":"10 pF","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"QUAD","Transistor Type":"GENERAL PURPOSE SMALL...
1439 Bytes - 02:14:52, 17 November 2024
Semelab.co.uk/2N6660C4A-JQRS.GCDE
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"UNSPECIFIED","Mfr Package Description":"HERMETIC SEALED PACKAGE-18","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.7000 W","Package Style":"CHIP CARRIER","Drain Current-Max (ID)":"1 A","Transistor Element Material":"SILICON","Operating Mode":"ENHANCEMENT","Number of Elements":"1","Feedback Cap-Max (Crss)":"10 pF","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"QUAD","Transistor Type":"GENERAL PURPOSE SMALL...
1440 Bytes - 02:14:52, 17 November 2024
Semelab.co.uk/2N6660C4A-JQRS.GCDM
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"UNSPECIFIED","Mfr Package Description":"HERMETIC SEALED PACKAGE-18","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.7000 W","Package Style":"CHIP CARRIER","Drain Current-Max (ID)":"1 A","Transistor Element Material":"SILICON","Operating Mode":"ENHANCEMENT","Number of Elements":"1","Feedback Cap-Max (Crss)":"10 pF","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"QUAD","Transistor Type":"GENERAL PURPOSE SMALL...
1436 Bytes - 02:14:52, 17 November 2024
Semelab.co.uk/2N6660C4A-JQRS.GRPB
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"UNSPECIFIED","Mfr Package Description":"HERMETIC SEALED PACKAGE-18","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.7000 W","Package Style":"CHIP CARRIER","Drain Current-Max (ID)":"1 A","Transistor Element Material":"SILICON","Operating Mode":"ENHANCEMENT","Number of Elements":"1","Feedback Cap-Max (Crss)":"10 pF","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"QUAD","Transistor Type":"GENERAL PURPOSE SMALL...
1440 Bytes - 02:14:52, 17 November 2024
Semelab.co.uk/2N6660C4A-JQRS.GRPC
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"UNSPECIFIED","Mfr Package Description":"HERMETIC SEALED PACKAGE-18","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.7000 W","Package Style":"CHIP CARRIER","Drain Current-Max (ID)":"1 A","Transistor Element Material":"SILICON","Operating Mode":"ENHANCEMENT","Number of Elements":"1","Feedback Cap-Max (Crss)":"10 pF","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"QUAD","Transistor Type":"GENERAL PURPOSE SMALL...
1438 Bytes - 02:14:52, 17 November 2024
Semelab.co.uk/2N6660C4A-JQRS.RAD
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"UNSPECIFIED","Mfr Package Description":"HERMETIC SEALED PACKAGE-18","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.7000 W","Package Style":"CHIP CARRIER","Drain Current-Max (ID)":"1 A","Transistor Element Material":"SILICON","Operating Mode":"ENHANCEMENT","Number of Elements":"1","Feedback Cap-Max (Crss)":"10 pF","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"QUAD","Transistor Type":"GENERAL PURPOSE SMALL...
1435 Bytes - 02:14:52, 17 November 2024
Semelab.co.uk/2N6660C4A-JQRS.SEM
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"UNSPECIFIED","Mfr Package Description":"HERMETIC SEALED PACKAGE-18","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.7000 W","Package Style":"CHIP CARRIER","Drain Current-Max (ID)":"1 A","Transistor Element Material":"SILICON","Operating Mode":"ENHANCEMENT","Number of Elements":"1","Feedback Cap-Max (Crss)":"10 pF","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"QUAD","Transistor Type":"GENERAL PURPOSE SMALL...
1435 Bytes - 02:14:52, 17 November 2024
Documentation and Support
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