Datasheet.Directory: Sale 2N5416PBFREE - Offer Electronic Components, Industrial Automation, Process Automation.

Did you mean: 2N5416

Product Datasheet Search Results:

2 Pages, 129 KB, Original

2N5416

Advanced Semiconductor, Inc.

1000 mA, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39

1 Pages, 43 KB, Scan

JAN2N5416S

Defense Logistics Agency

1000 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5

1 Pages, 43 KB, Scan

JANTX2N5416S

Defense Logistics Agency

1000 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5

1 Pages, 43 KB, Scan

JANTXV2N5416S

Defense Logistics Agency

1 A, 300 V, PNP, Si, POWER TRANSISTOR, TO-39

1 Pages, 41 KB, Scan

2N5416

Thomson-csf

Condensed Data Book 1977

6 Pages, 261 KB, Original

2N5416

Boca Semiconductor

HIGH VOLTAGE AMPLIFIERS - Pol=PNP / Pkg=TO39 / Vceo=300 / Ic=1 / Hfe=30-150 / fT(Hz)=15M / Pwr(W)=10

6 Pages, 261 KB, Original

JTX2N5416

Boca Semiconductor

BJT: PNP: High Voltage Transistor: IC 1A

6 Pages, 261 KB, Original

JTXV2N5416

Boca Semiconductor

BJT: PNP: High Voltage Transistor: IC 1A

4 Pages, 138 KB, Original

2N5416

Continental Device India Limited

PNP SILICON HIGH VOLTAGE TRANSISTOR

5 Pages, 843 KB, Original

2N5416

Central Semiconductor

Bipolar Transistors - BJT PNP High Voltage

4 Pages, 841 KB, Original

2N5416 LEAD FREE

Central Semiconductor

Trans GP BJT PNP 300V 1A 3-Pin TO-39 Box

1 Pages, 33 KB, Original

2N5416LEADFREE

Central Semiconductor Corp.

1000 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39

4 Pages, 841 KB, Original

2N5416 PBFREE

Central Semiconductor

Trans GP BJT PNP 300V 1A 1000mW 3-Pin TO-39 Box

1 Pages, 44 KB, Original

2N5416

Crimson Semiconductor

Transistor Selection Guide

1 Pages, 54 KB, Original

2N5416

Diode Transistor Co., Inc.

Transistor Short Form Data

1 Pages, 523 KB, Scan

2N5416

Silicon Transistor Corp.

JAN / Consumer / Military / Industrial / Automotive / Hi-Rel

1 Pages, 48 KB, Scan

2N5416

Fairchild Semiconductor

Full Line Condensed Catalogue 1977

2 Pages, 68 KB, Scan

2N5416

Motorola

European Master Selection Guide 1986

6 Pages, 318 KB, Original

2N5416S

Motorola / Freescale Semiconductor

Power Transistor Selection Guide

4 Pages, 235 KB, Scan

2N5416

General Electric Solid State

High-voltage silicon P-N-P planar transistor. - Pol=PNP / Pkg=TO39 / Vceo=300 / Ic=1 / Hfe=30-150 / fT(Hz)=15M / Pwr(W)=10

5 Pages, 393 KB, Scan

2N5416

General Transistor Corp.

Power Transistor Selection Guide

1 Pages, 53 KB, Original

2N5416

High Voltage Semi-conductor Specialists, Inc.

Silicon PNP - Power Transistors

2 Pages, 49 KB, Original

JAN2N5416

Microchip Technology

Trans GP BJT PNP 300V 1A 750mW 3-Pin TO-5 Bag

2 Pages, 49 KB, Original

JANTX2N5416

Microchip Technology

Trans GP BJT PNP 300V 1A 750mW 3-Pin TO-5 Bag

2 Pages, 49 KB, Original

JANTX2N5416S

Microchip Technology

Trans GP BJT PNP 300V 1A 750mW 3-Pin TO-39 Bag

2 Pages, 49 KB, Original

JANTXV2N5416

Microchip Technology

Trans GP BJT PNP 300V 1A 750mW 3-Pin TO-5 Bag

2 Pages, 49 KB, Original

JANTXV2N5416S

Microchip Technology

Trans GP BJT PNP 300V 1A 750mW 3-Pin TO-39 Bag

1 Pages, 89 KB, Scan

2N5416

Microsemi Corp.

1000 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5

2 Pages, 24 KB, Original

2N5416JAN

New England Semiconductor

PNP SILICON LOW-POWER TRANSISTOR

2 Pages, 49 KB, Original

2N5416JANTX

Microsemi

Trans GP BJT PNP 300V 1A 750mW 3-Pin TO-5 Bag

2 Pages, 49 KB, Original

2N5416JANTXV

Microsemi Corporation

PNP LOW POWER SILICON TRANSISTOR

2 Pages, 24 KB, Original

2N5416JTX

New England Semiconductor

PNP SILICON LOW-POWER TRANSISTOR

2 Pages, 24 KB, Original

2N5416JTXV

New England Semiconductor

PNP SILICON LOW-POWER TRANSISTOR

3 Pages, 177 KB, Original

2N5416S

Microsemi Corp.

1000 mA, 200 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39

Product Details Search Results:

Advancedsemiconductor.com/2N5416

{"Status":"ACTIVE","Package Body Material":"METAL","Mfr Package Description":"TO-39, 3 PIN","Terminal Form":"WIRE","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"30","Transistor Element Material":"SILICON","Transition Frequency-Nom (fT)":"15 MHz","Collector Current-Max (IC)":"1 A","Terminal Position":"BOTTOM","Transistor Polarity":"PNP","Package Shape":"ROUND","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Number of Terminals":"3","Number of Elements":"1"}...

1204 Bytes - 05:11:32, 20 September 2024

Aeroflex.com/JAN2N5416S

{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"30","Turn-off Time-Max (toff)":"10000 ns","Package Body Material":"METAL","Mfr Package Description":"SIMILAR TO TO-5, 3 PIN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.7500 W","Package Style":"CYLINDRICAL","Turn-on Time-Max (ton)":"1000 ns","Collector-emitter Voltage-Max":"300 V","Transistor Application":"SWITCHING","Collector Current-Max (IC)":"1 A","Case Connection":"COLLECTOR","Transistor Element Material":"SILICON","Terminal Position":"BOTTO...

1403 Bytes - 05:11:32, 20 September 2024

Aeroflex.com/JANTX2N5416S

1418 Bytes - 05:11:32, 20 September 2024

Aeroflex.com/JANTXV2N5416S

{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Transistor Polarity":"PNP","Terminal Form":"WIRE","Package Style":"CYLINDRICAL","Collector-emitter Voltage-Max":"300 V","Transistor Application":"SWITCHING","Collector Current-Max (IC)":"1 A","Case Connection":"COLLECTOR","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"3","Number of Element...

1239 Bytes - 05:11:32, 20 September 2024

Centralsemi.com/2N5416

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Mfr Package Description":"TO-39, 3 PIN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"1 W","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"30","Collector-emitter Voltage-Max":"300 V","Transistor Element Material":"SILICON","Transition Frequency-Nom (fT)":"15 MHz","Collector Current-Max (IC)":"1 A","Terminal Position":"BOTTOM","Transistor Polarity":"PNP","Package Shape":"ROUND","Configuration":"SINGLE","Tran...

1307 Bytes - 05:11:32, 20 September 2024

Centralsemi.com/2N5416 LEAD FREE

{"Product Category":"GP\u00a0BJT","Manufacturer":"CENTRAL SEMICONDUCTOR"}...

790 Bytes - 05:11:32, 20 September 2024

Centralsemi.com/2N5416LEADFREE

{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"MATTE TIN (315)","Package Body Material":"METAL","Mfr Package Description":"TO-39, 3 PIN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"1 W","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"30","Collector-emitter Voltage-Max":"300 V","Transistor Element Material":"SILICON","Transition Frequency-Nom (fT)":"15 MHz","Collector Current-Max (IC)":"1 A","EU RoHS Compliant":"Yes","Terminal Position":"BOTTOM","Transistor Polarity":"PNP","Pa...

1407 Bytes - 05:11:32, 20 September 2024

Centralsemi.com/2N5416 PBFREE

{"Collector Current (DC) ":"1(A)","Transistor Polarity":"PNP","Power Dissipation":"1(W)","Category ":"Bipolar Power","Emitter-Base Voltage":"6(V)","Rad Hardened":"No","Packaging":"Box","Operating Temperature Classification":"Military","Operating Temp Range":"-65C to 200C","Frequency":"15(MHz)","Output Power":"Not Required(W)","Collector-Base Voltage":"350(V)","DC Current Gain":"30","Mounting":"Through Hole","Package Type":"TO-39","Configuration":"Single","Pin Count":"3","Number of Elements":"1"}...

1581 Bytes - 05:11:32, 20 September 2024

Dla.mil/2N5416+JAN

{"@I(C) (A) (Test Condition)":"50m","I(CBO) Max. (A)":"50u","Absolute Max. Power Diss. (W)":"10","I(C) Abs.(A) Collector Current":"1.0","h(FE) Max. Current gain.":"120","@V(CE) (V) (Test Condition)":"10","f(T) Min. (Hz) Transition Freq":"15M","V(BR)CEO (V)":"300","Package":"TO-39","h(FE) Min. Static Current Gain":"30","V(BR)CBO (V)":"350","Military":"Y","Mil Number":"JAN2N5416"}...

890 Bytes - 05:11:32, 20 September 2024

Dla.mil/2N5416+JANTX

901 Bytes - 05:11:32, 20 September 2024

Dla.mil/2N5416+JANTXV

907 Bytes - 05:11:32, 20 September 2024

Dla.mil/2N5416S+JAN

{"V(CE)sat Max.(V)":"2.0","Absolute Max. Power Diss. (W)":"10","t(on) Max. (s) Turn-On Time":"1.0u","V(BR)CBO (V)":"350","@V(CB) (V) (Test Condition)":"10","h(FE) Min. Static Current Gain":"30","I(C) Abs.(A) Collector Current":"1.0","h(FE) Max. Current gain.":"120","t(off) Max. (s) Turn-Off Time":"10u","@Freq. (Hz) (Test Condition)":"1.0M","Package":"TO-39","@V(CE) (V) (Test Condition)":"10","@I(B) (A) (Test Condition)":"5.0m","V(BR)CEO (V)":"300","Military":"Y","Mil Number":"JAN2N5416S","@I(C) (A) (Test Co...

1067 Bytes - 05:11:32, 20 September 2024

Dla.mil/2N5416S+JANTX

1079 Bytes - 05:11:32, 20 September 2024

Dla.mil/2N5416S+JANTXV

1085 Bytes - 05:11:32, 20 September 2024

Microchip.com/GRP-DATA-JANS2N5416

917 Bytes - 05:11:32, 20 September 2024

Microchip.com/JAN2N5416

1038 Bytes - 05:11:32, 20 September 2024

Microchip.com/JANTX2N5416

1046 Bytes - 05:11:32, 20 September 2024

Microchip.com/JANTX2N5416S

1023 Bytes - 05:11:32, 20 September 2024

Microchip.com/JANTXV2N5416

{"Collector Current (DC) ":"1(A)","Transistor Polarity":"PNP","Category ":"Bipolar Power","Mounting":"Through Hole","Emitter-Base Voltage":"6(V)","Packaging":"Bag","Power Dissipation":"0.75(W)","Operating Temp Range":"-65C to 200C","Package Type":"TO-5","Collector-Base Voltage":"350(V)","DC Current Gain":"30","Output Power":"Not Required(W)","Configuration":"Single","Pin Count":"3","Number of Elements":"1"}...

1451 Bytes - 05:11:32, 20 September 2024

Microchip.com/JANTXV2N5416S

1034 Bytes - 05:11:32, 20 September 2024

Microsemi.com/2N5416

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Mfr Package Description":"TO-5, 3 PIN","Terminal Form":"WIRE","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"30","Collector-emitter Voltage-Max":"300 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"1 A","Terminal Position":"BOTTOM","Transistor Polarity":"PNP","Package Shape":"ROUND","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Number of Terminals":"3","Number of...

1200 Bytes - 05:11:32, 20 September 2024

Microsemi.com/2N5416JANTX

{"Collector Current (DC) ":"1(A)","Transistor Polarity":"PNP","Collector-Emitter Voltage":"300(V)","Mounting":"Through Hole","Emitter-Base Voltage":"6(V)","Rad Hardened":"No","Category ":"Bipolar Power","Operating Temperature Classification":"Military","Power Dissipation":"0.75(W)","Operating Temp Range":"-65C to 200C","Package Type":"TO-5","Collector-Base Voltage":"350(V)","DC Current Gain":"30","Packaging":"Bag","Output Power":"Not Required(W)","Configuration":"Single","Pin Count":"3","Number of Elements...

1519 Bytes - 05:11:32, 20 September 2024

Microsemi.com/2N5416S

{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"30","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Transistor Polarity":"PNP","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.7500 W","Package Style":"CYLINDRICAL","Turn-on Time-Max (ton)":"1000 ns","Turn-off Time-Max (toff)":"10000 ns","Collector-emitter Voltage-Max":"200 V","Transistor Application":"AMPLIFIER","Collector Current-Max (IC)":"1 A","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Type":"GE...

1318 Bytes - 05:11:32, 20 September 2024

Microsemi.com/2N5416SJANTX

{"Collector Current (DC) ":"1 A","Transistor Polarity":"PNP","Collector Current (DC) (Max)":"1 A","Collector-Emitter Voltage":"300 V","Mounting":"Through Hole","Emitter-Base Voltage":"6 V","Category ":"Bipolar Power","DC Current Gain (Min)":"30","Operating Temperature Classification":"Military","Power Dissipation":"0.75 W","Operating Temp Range":"-65C to 200C","Package Type":"TO-39","Collector-Base Voltage":"350 V","Rad Hardened":"No","DC Current Gain":"30","Pin Count":"3","Number of Elements":"1"}...

1486 Bytes - 05:11:32, 20 September 2024

Microsemi.com/2N5416SJANTXV

{"Collector Current (DC) ":"1 A","Transistor Polarity":"PNP","Collector-Emitter Voltage":"300 V","Rad Hardened":"No","Mounting":"Through Hole","Emitter-Base Voltage":"6 V","Category ":"Bipolar Power","Operating Temperature Classification":"Military","Power Dissipation":"0.75 W","Operating Temp Range":"-65C to 200C","Package Type":"TO-39","Collector-Base Voltage":"350 V","DC Current Gain":"30","Pin Count":"3","Number of Elements":"1"}...

1424 Bytes - 05:11:32, 20 September 2024

Microsemi.com/2N5416UA

{"Collector Current (DC) ":"1(A)","Configuration":"Single","Transistor Polarity":"PNP","Category ":"Bipolar Power","Mounting":"Surface Mount","Emitter-Base Voltage":"6(V)","Collector-Emitter Voltage":"300(V)","Operating Temp Range":"-65C to 200C","Packaging":"Waffle","Operating Temperature Classification":"Military","Rad Hardened":"No","Package Type":"UA","Collector-Base Voltage":"350(V)","DC Current Gain":"30","Output Power":"Not Required(W)","Power Dissipation":"0.75(W)","Pin Count":"4","Number of Elemen...

1518 Bytes - 05:11:32, 20 September 2024

Microsemi.com/GRP-DATA-JANS2N5416

{"Collector Current (DC) ":"1(A)","Transistor Polarity":"PNP","Operating Temperature Classification":"Military","Mounting":"Through Hole","Emitter-Base Voltage":"6(V)","Rad Hardened":"No","Category ":"Bipolar Power","Packaging":"Tray","Power Dissipation":"0.75(W)","Operating Temp Range":"-65C to 200C","Package Type":"TO-5","Collector-Base Voltage":"350(V)","DC Current Gain":"30","Output Power":"Not Required(W)","Configuration":"Single","Pin Count":"3","Number of Elements":"1"}...

1519 Bytes - 05:11:32, 20 September 2024

Microsemi.com/JAN2N5416

{"Terminal Finish":"TIN LEAD","Transistor Polarity":"PNP","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.7500 W","Collector Current-Max (IC)":"1 A","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Turn-off Time-Max (toff)":"10000 ns","Transistor Element Material":"SILICON","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Turn-on Time-Max (ton)":"1000 ns","Collector-emitter Voltage-Max":"300 V","Transistor Application":"SWITCHING","Case Connectio...

1411 Bytes - 05:11:32, 20 September 2024

Microsemi.com/JAN2N5416S

1417 Bytes - 05:11:32, 20 September 2024

Microsemi.com/JAN2N5416UA

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"1A","Transistor Type":"PNP","Frequency - Transition":"-","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"2V @ 5mA, 50mA","Series":"Military, MIL-PRF-19500\/485","Package \/ Case":"TO-205AA, TO-5-3 Metal Can","Voltage - Collector Emitter Breakdown (Max)":"300V","Power - Max":"750mW","Packaging":"Bulk","Datasheets":"2N5415UA-5416UA","Current - Collector Cutoff (Max)":"1mA","Supplier Device Package":"TO-5","S...

1494 Bytes - 05:11:32, 20 September 2024

Microsemi.com/JANS2N5416

{"Category":"Discrete Semiconductor Products","Series":"*","Other Names":"1086-16147","Family":"Transistors (BJT) - Single","Standard Package":"1"}...

897 Bytes - 05:11:32, 20 September 2024

Microsemi.com/JANS2N5416S

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Transistor Polarity":"PNP","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"10 W","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"30","Collector-emitter Voltage-Max":"300 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"1 A","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Number of Terminals":"3"}...

1158 Bytes - 05:11:32, 20 September 2024

Microsemi.com/JANS2N5416U4

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"1A","Transistor Type":"PNP","Frequency - Transition":"-","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"2V @ 5mA, 50mA","Series":"Military, MIL-PRF-19500\/485","Package \/ Case":"*","Voltage - Collector Emitter Breakdown (Max)":"300V","Power - Max":"1W","Packaging":"*","Datasheets":"2N5415U4, 2N5416U4","Current - Collector Cutoff (Max)":"1mA","Supplier Device Package":"*","Standard Package":"1","Mounting ...

1462 Bytes - 05:11:32, 20 September 2024

Microsemi.com/JANS2N5416UA

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"1A","Transistor Type":"PNP","Frequency - Transition":"-","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"2V @ 5mA, 50mA","Series":"Military, MIL-PRF-19500\/485","Package \/ Case":"*","Voltage - Collector Emitter Breakdown (Max)":"300V","Power - Max":"750mW","Packaging":"*","Datasheets":"2N5415UA-5416UA","Current - Collector Cutoff (Max)":"1mA","Supplier Device Package":"*","Standard Package":"1","Mounting ...

1460 Bytes - 05:11:32, 20 September 2024

Microsemi.com/JANTX2N5416

1421 Bytes - 05:11:32, 20 September 2024

Microsemi.com/JANTX2N5416S

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"1A","Online Catalog":"PNP Transistors","Transistor Type":"PNP","Frequency - Transition":"-","Product Photos":"JANTX2N5682","Vce Saturation (Max) @ Ib, Ic":"2V @ 5mA, 50mA","Current - Collector Cutoff (Max)":"1mA","Series":"Military, MIL-PRF-19500\/485","Standard Package":"1","Voltage - Collector Emitter Breakdown (Max)":"300V","Supplier Device Package":"TO-39","Packaging":"Bulk","Datasheets":"2N5415S,2N5416S","Power - Max":"750m...

1752 Bytes - 05:11:32, 20 September 2024

Microsemi.com/JANTX2N5416U4

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"1A","Transistor Type":"PNP","Frequency - Transition":"-","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"2V @ 5mA, 50mA","Series":"Military, MIL-PRF-19500\/485","Package \/ Case":"*","Voltage - Collector Emitter Breakdown (Max)":"300V","Power - Max":"1W","Packaging":"*","Datasheets":"2N5415U4, 2N5416U4","Current - Collector Cutoff (Max)":"1mA","Supplier Device Package":"*","Standard Package":"1","Mounting ...

1467 Bytes - 05:11:32, 20 September 2024

Microsemi.com/JANTX2N5416UA

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"1A","Transistor Type":"PNP","Frequency - Transition":"-","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"2V @ 5mA, 50mA","Series":"Military, MIL-PRF-19500\/485","Package \/ Case":"*","Voltage - Collector Emitter Breakdown (Max)":"300V","Power - Max":"750mW","Packaging":"*","Datasheets":"2N5415UA-5416UA","Current - Collector Cutoff (Max)":"1mA","Supplier Device Package":"*","Standard Package":"1","Mounting ...

1464 Bytes - 05:11:32, 20 September 2024

Microsemi.com/JANTXV2N5416

1431 Bytes - 05:11:32, 20 September 2024

Microsemi.com/JANTXV2N5416S

1435 Bytes - 05:11:32, 20 September 2024

Microsemi.com/JANTXV2N5416U4

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"1A","Transistor Type":"PNP","Frequency - Transition":"-","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"2V @ 5mA, 50mA","Series":"Military, MIL-PRF-19500\/485","Package \/ Case":"*","Voltage - Collector Emitter Breakdown (Max)":"300V","Power - Max":"1W","Packaging":"*","Datasheets":"2N5415U4, 2N5416U4","Current - Collector Cutoff (Max)":"1mA","Supplier Device Package":"*","Standard Package":"1","Mounting ...

1473 Bytes - 05:11:32, 20 September 2024

Microsemi.com/JANTXV2N5416UA

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"1A","Transistor Type":"PNP","Frequency - Transition":"-","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"2V @ 5mA, 50mA","Series":"Military, MIL-PRF-19500\/485","Package \/ Case":"*","Voltage - Collector Emitter Breakdown (Max)":"300V","Power - Max":"750mW","Packaging":"*","Datasheets":"2N5415UA-5416UA","Current - Collector Cutoff (Max)":"1mA","Supplier Device Package":"*","Standard Package":"1","Mounting ...

1470 Bytes - 05:11:32, 20 September 2024

Multicomp.com.au/2N5416

{"Collector Emitter Voltage V(br)ceo:":"-300 V","Transistor Polarity:":"PNP","MSL:":"-","No. of Pins:":"3","DC Collector Current:":"-1 A","Power Dissipation Pd:":"1 W","Transistor Case Style:":"TO-39","Operating Temperature Max:":"200 \u00b0C","DC Current Gain hFE:":"30","SVHC:":"No SVHC (15-Jun-2015)","Transition Frequency Typ ft:":"15 MHz"}...

1334 Bytes - 05:11:32, 20 September 2024

N_a/2N5416

{"Category":"PNP Transistor, Transistor","Amps":"1A","MHz":">50 MHz","Volts":"350V"}...

515 Bytes - 05:11:32, 20 September 2024

Nte_electronics_inc_/2N5416

878 Bytes - 05:11:32, 20 September 2024

Nteinc.com/2N5416

822 Bytes - 05:11:32, 20 September 2024

Semelab.co.uk/2N5416

{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL, TO-39, 3 PIN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"1 W","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"30","Collector-emitter Voltage-Max":"300 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"15 MHz","Collector Current-Max (IC)":"1 A","Case Connection":"COLLECTOR","Transistor Element Material":"SILICON","Terminal Posit...

1373 Bytes - 05:11:32, 20 September 2024

Semelab.co.uk/2N5416-220M

{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Mfr Package Description":"TO-220M, 3 PIN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"10 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"30","Collector-emitter Voltage-Max":"300 V","Transistor Element Material":"SILICON","Transition Frequency-Nom (fT)":"15 MHz","Collector Current-Max (IC)":"1 A","Terminal Position":"SINGLE","Transistor Polarity":"PNP","Package Shape":"RECTANGULAR","Config...

1302 Bytes - 05:11:32, 20 September 2024