Product Datasheet Search Results:
16 Pages, 429 KB, Scan- 1N5806US+JAN
- Defense Electronics Supply Center
- 2.5A Iout, 150V Vrrm Fast Recovery Rectifier
16 Pages, 429 KB, Scan- 1N5806US+JANS
- Defense Electronics Supply Center
- 2.5A Iout, 150V Vrrm Fast Recovery Rectifier
16 Pages, 429 KB, Scan- 1N5806US+JANTX
- Defense Electronics Supply Center
- 2.5A Iout, 150V Vrrm Fast Recovery Rectifier
16 Pages, 429 KB, Scan- 1N5806US+JANTXV
- Defense Electronics Supply Center
- 2.5A Iout, 150V Vrrm Fast Recovery Rectifier
244 Pages, 3329 KB, Original- 1N5806US
- Eic Semiconductor
- Rectifier Diode Switching 150V 2.5A 25ns 2-Pin DO-41 T/R
5 Pages, 615 KB, Original- 1N5806US
- Microchip Technology
- Rectifier Diode Switching 150V 2.5A 25ns 2-Pin A-MELF Bag
5 Pages, 615 KB, Original- JANS1N5806US
- Microchip Technology
- Rectifier Diode Switching 150V 2.5A 25ns 2-Pin A-MELF Waffle
Product Details Search Results:
Dla.mil/1N5806US+JAN
{"I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"35","I(O) Max.(A) Output Current":"2.5","@t(w) (s) (Test Condition)":"8.3m","@I(R) (A) (Test Condition)":"500m","V(FM) Max.(V) Forward Voltage":"875m","@Temp. (°C) (Test Condition)":"100","@V(R) (V)(Test Condition)":"150","V(RRM)(V) Rep.Pk.Rev. Voltage":"150","Package":"MELF-5.1","I(RM) Max.(A) Pk. Rev. Current":"50u","@I(F) (A) (Test Condition)":"500m","Military":"Y","Mil Number":"JAN1N5806US","Semiconductor Material":"Silicon","t(rr) Max.(s) Rev.Rec. Time":"25n","@T...
1153 Bytes - 15:57:52, 15 January 2025
Dla.mil/1N5806US+JANS
{"I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"35","I(O) Max.(A) Output Current":"2.5","@t(w) (s) (Test Condition)":"8.3m","@I(R) (A) (Test Condition)":"500m","V(FM) Max.(V) Forward Voltage":"875m","@Temp. (°C) (Test Condition)":"100","@V(R) (V)(Test Condition)":"150","V(RRM)(V) Rep.Pk.Rev. Voltage":"150","Package":"MELF-5.1","I(RM) Max.(A) Pk. Rev. Current":"50u","@I(F) (A) (Test Condition)":"500m","Military":"Y","Mil Number":"JANS1N5806US","Semiconductor Material":"Silicon","t(rr) Max.(s) Rev.Rec. Time":"25n","@...
1159 Bytes - 15:57:52, 15 January 2025
Dla.mil/1N5806US+JANTX
{"I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"35","I(O) Max.(A) Output Current":"2.5","@t(w) (s) (Test Condition)":"8.3m","@I(R) (A) (Test Condition)":"500m","V(FM) Max.(V) Forward Voltage":"875m","@Temp. (°C) (Test Condition)":"100","@V(R) (V)(Test Condition)":"150","V(RRM)(V) Rep.Pk.Rev. Voltage":"150","Package":"MELF-5.1","I(RM) Max.(A) Pk. Rev. Current":"50u","@I(F) (A) (Test Condition)":"500m","Military":"Y","Mil Number":"JANTX1N5806US","Semiconductor Material":"Silicon","t(rr) Max.(s) Rev.Rec. Time":"25n","...
1164 Bytes - 15:57:52, 15 January 2025
Dla.mil/1N5806US+JANTXV
{"I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"35","I(O) Max.(A) Output Current":"2.5","@t(w) (s) (Test Condition)":"8.3m","@I(R) (A) (Test Condition)":"500m","V(FM) Max.(V) Forward Voltage":"875m","@Temp. (°C) (Test Condition)":"100","@V(R) (V)(Test Condition)":"150","V(RRM)(V) Rep.Pk.Rev. Voltage":"150","Package":"MELF-5.1","I(RM) Max.(A) Pk. Rev. Current":"50u","@I(F) (A) (Test Condition)":"500m","Military":"Y","Mil Number":"JANTXV1N5806US","Semiconductor Material":"Silicon","t(rr) Max.(s) Rev.Rec. Time":"25n",...
1171 Bytes - 15:57:52, 15 January 2025
Eic_semiconductor/1N5806US
{"Rectifier Type":"Switching Diode","Peak Rep Rev Volt":"150(V)","Peak Non-Repetitive Surge Current":"35(A)","Forward Current":"2500(mA)","Peak Reverse Recovery Time":"25(ns)","Mounting":"Through Hole","Peak Reverse Current":"1(uA)","Forward Voltage":"0.875(V)","Packaging":"Tape and Reel","Rev Curr":"1(uA)","Rad Hardened":"No","Rev Recov Time":"25(ns)","Package Type":"DO-41","Maximum Forward Current":"2500(mA)","Peak Forward Voltage":"0.875(V)","Configuration":"Single","Pin Count":"2"}...
1558 Bytes - 15:57:52, 15 January 2025
Microchip.com/1N5806US
1053 Bytes - 15:57:52, 15 January 2025
Microchip.com/GRP-DATA-JANS1N5806US
914 Bytes - 15:57:52, 15 January 2025
Microchip.com/JANS1N5806US
{"Peak Reverse Current":"1(uA)","Peak Non-Repetitive Surge Current":"35(A)","Peak Reverse Recovery Time":"25(ns)","Mounting":"Surface Mount","Rad Hardened":"No","Packaging":"Waffle","Rectifier Type":"Switching Diode","Operating Temp Range":"-65C to 175C","Package Type":"A-MELF","Maximum Forward Current":"2500(mA)","Peak Forward Voltage":"0.975(V)","Peak Rep Rev Volt":"150(V)","Configuration":"Single","Pin Count":"2"}...
1496 Bytes - 15:57:52, 15 January 2025
Microchip.com/JANS1N5806US-1542
1106 Bytes - 15:57:52, 15 January 2025
Microchip.com/JANS1N5806US/TR
1091 Bytes - 15:57:52, 15 January 2025
Microchip.com/JANTX1N5806US
1078 Bytes - 15:57:52, 15 January 2025
Microchip.com/JANTXV1N5806US
1083 Bytes - 15:57:52, 15 January 2025
Documentation and Support
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