Product Datasheet Search Results:

1MBH50D-060S.pdf5 Pages, 436 KB, Original
1MBH50D-060S.pdf5 Pages, 436 KB, Original
1MBH50D-060S.pdf5 Pages, 434 KB, Original
1MBH50D-060S
Fujitsu Limited
75 A, 600 V, N-CHANNEL IGBT

Product Details Search Results:

Fuji_electric/1MBH50D-060S
{"Collector Current (DC) ":"75(A)","Operating Temperature (Min)":"-40C","Mounting":"Through Hole","Operating Temperature (Max)":"150C","Gate to Emitter Voltage (Max)":"'\u00b120(V)","Channel Type":"N","Operating Temperature Classification":"Automotive","Rad Hardened":"No","Package Type":"TO-3PL","Configuration":"Single","Pin Count":"3 +Tab"}...
1332 Bytes - 01:24:55, 25 November 2024
Fujielectric.co.jp/1MBH50D-060S
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-3PL, 3 PIN","Terminal Form":"THROUGH-HOLE","Package Style":"FLANGE MOUNT","Turn-off Time-Nom (toff)":"600 ns","Collector-emitter Voltage-Max":"600 V","Transistor Application":"POWER CONTROL","Collector Current-Max (IC)":"75 A","Turn-on Time-Nom (ton)":"270 ns","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Transistor Type":"INSULATED GATE BIPOLAR","Package Shape":"RECTAN...
1331 Bytes - 01:24:55, 25 November 2024
Fuji_semiconductor/1MBH50D-060S
{"Configuration":"Single","Dimensions":"20.5 x 5 x 26 mm","Mounting Type":"Through Hole","Operating Temperature Range":"Maximum of +150 \u00b0C","Maximum Continuous Collector Current":"75 A","Maximum Collector Emitter Voltage":"600 V","Maximum Power Dissipation":"230 W","Channel Type":"N","Width":"5 mm","Length":"20.5 mm","Maximum Gate Emitter Voltage":"\u00b120 V","Package Type":"TO-3PL","Height":"26 mm","Maximum Operating Temperature":"+150 \u00b0C","Pin Count":"3"}...
1475 Bytes - 01:24:55, 25 November 2024
Fujitsu.com/1MBH50D-060S
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-3PL, 3 PIN","Terminal Form":"THROUGH-HOLE","Package Style":"FLANGE MOUNT","Turn-off Time-Nom (toff)":"500 ns","Collector-emitter Voltage-Max":"600 V","Transistor Application":"POWER CONTROL","Collector Current-Max (IC)":"75 A","Turn-on Time-Nom (ton)":"150 ns","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Transistor Type":"INSULATED GATE BIPOLAR","Package Shape":"RECTAN...
1295 Bytes - 01:24:55, 25 November 2024

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