Did you mean: VN0606L
Product Datasheet Search Results:
2 Pages, 34 KB, Original- N0606YS200-240
- Westcode Semiconductors
- Phase Control Thyristors - Capsule Types
Product Details Search Results:
Atmel.com/VN0606L
{"Terminal Form":"WIRE","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Additional Feature":"LOW THRESHOLD","Status":"Transferred","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.3300 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"3 ohm","JESD-30 Code":"O-PBCY-W3","DS Breakdown Voltage-Min":"60 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface Mount":"NO","J...
1496 Bytes - 14:41:32, 16 March 2025
Atmel.com/VN0606L-18
{"Terminal Form":"WIRE","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Additional Feature":"LOW THRESHOLD","Status":"Transferred","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.3300 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"3 ohm","JESD-30 Code":"O-PBCY-W3","DS Breakdown Voltage-Min":"60 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface Mount":"NO","J...
1461 Bytes - 14:41:32, 16 March 2025
Atmel.com/VN0606LTA
{"Terminal Form":"WIRE","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Additional Feature":"LOW THRESHOLD","Status":"Transferred","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.3300 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"3 ohm","JESD-30 Code":"O-PBCY-W3","DS Breakdown Voltage-Min":"60 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface Mount":"NO","J...
1454 Bytes - 14:41:32, 16 March 2025
Atmel.com/VN0606LTR
{"Terminal Form":"WIRE","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Additional Feature":"LOW THRESHOLD","Status":"Transferred","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.3300 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"3 ohm","JESD-30 Code":"O-PBCY-W3","DS Breakdown Voltage-Min":"60 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface Mount":"NO","J...
1456 Bytes - 14:41:32, 16 March 2025
Atmel.com/VN0606M
{"Terminal Form":"WIRE","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Additional Feature":"LOW THRESHOLD","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.3900 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"3 ohm","JESD-30 Code":"O-PBCY-W3","DS Breakdown Voltage-Min":"60 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface Mount":"NO","...
1513 Bytes - 14:41:32, 16 March 2025
Blackbox.com/EYN0606A-1000
785 Bytes - 14:41:32, 16 March 2025
Dynexsemi.com/DCR1007SN0606
{"I(T) Max.(A) On-state Current":"1.2k±","V(T) Max. (V)":"2","Status":"Discontinued","@Temp. (°C) (Test Condition)":"125","@ t(w) (s) (Test Condition)":"10m","I(H) Max.(A) Holding Current":"250m","@I(T) (A) (Test Condition)":"2.9k","Package":"TO-200var74","V(DRM) Max.(V)Rep.Pk.Off Volt.":"500","dv/dt Min. (V/us)":"300","I(GT) Max. (A)":"200m","V(GT) Max.(V)":"3.5","Military":"N","I(D) Max. (A) Leakage Current":"50m","I(TSM) Max. (A)":"16.4k","t(q) Typ. (s)":"350u"}...
974 Bytes - 14:41:32, 16 March 2025
Microchip.com/TN0606N3-G
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Online Catalog":"N-Channel Logic Level Gate FETs","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 1mA","Series":"-","Package / Case":"TO-226-3, TO-92-3 (TO-226AA)","Supplier Device Package":"TO-92-3","Datasheets":"TN0606","Rds On (Max) @ Id, Vgs":"1.5 Ohm @ 750mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Bulk","Power - Max":"1W","Standard Packag...
1798 Bytes - 14:41:32, 16 March 2025
Microchip.com/TN0606N3-G P002
{"Factory Pack Quantity":"2000","Vds - Drain-Source Breakdown Voltage":"60 V","Transistor Polarity":"N-Channel","Minimum Operating Temperature":"- 55 C","Channel Mode":"Enhancement","Vgs - Gate-Source Breakdown Voltage":"20 V","Brand":"Microchip Technology","Id - Continuous Drain Current":"500 mA","Mounting Style":"Through Hole","Pd - Power Dissipation":"1 W","Packaging":"Reel","Rise Time":"14 ns","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"15 Ohms","Package / Case":"TO-92-3","Typical Tu...
1699 Bytes - 14:41:32, 16 March 2025
Microchip.com/TN0606N3-G P003
{"Factory Pack Quantity":"2000","Vds - Drain-Source Breakdown Voltage":"60 V","Transistor Polarity":"N-Channel","Minimum Operating Temperature":"- 55 C","Channel Mode":"Enhancement","Vgs - Gate-Source Breakdown Voltage":"20 V","Brand":"Microchip Technology","Id - Continuous Drain Current":"500 mA","Mounting Style":"Through Hole","Pd - Power Dissipation":"1 W","Packaging":"Reel","Rise Time":"14 ns","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"15 Ohms","Package / Case":"TO-92-3","Typical Tu...
1699 Bytes - 14:41:32, 16 March 2025
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| N0606YS240.pdf | 0.08 | 1 | Request |
