Product Datasheet Search Results:
9 Pages, 446 KB, Original- IPD079N06L3G
- Infineon Technologies Ag
- 50 A, 60 V, 0.0079 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
10 Pages, 447 KB, Original- IPD079N06L3GBTMA1
- Infineon Technologies
- MOSFET N-Ch 60V 50A DPAK-2 OptiMOS 3
Product Details Search Results:
Infineon.com/IPD079N06L3G
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"43 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"50 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0079 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"200 A","Channel Type":"N-CHANNEL","China R...
1631 Bytes - 01:51:19, 17 March 2025
Infineon.com/IPD079N06L3GBTMA1
{"Product Category":"MOSFET","Series":"XPD079N06","Brand":"Infineon Technologies","Packaging":"Reel","Tradename":"OptiMOS","RoHS":"Details","Manufacturer":"Infineon"}...
1125 Bytes - 01:51:19, 17 March 2025
Documentation and Support
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| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| IPD079N06L3G.pdf | 0.44 | 1 | Request |
