VUM25-05E
35 A, 500 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET

From Zilog

StatusActive
Case ConnectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min500 V
Drain Current-Max (ID)35 A
Drain-source On Resistance-Max0.1200 ohm
EU RoHS CompliantYes
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 CodeR-XUFM-X7
Moisture Sensitivity LevelNOT SPECIFIED
Number of Elements1
Number of Terminals7
Operating ModeENHANCEMENT MODE
Operating Temperature-Max150 Cel
Package Body MaterialUNSPECIFIED
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Peak Reflow Temperature (Cel)NOT SPECIFIED
Polarity/Channel TypeN-CHANNEL
Pulsed Drain Current-Max (IDM)95 A
Qualification StatusCOMMERCIAL
REACH CompliantYes
Surface MountNO
Terminal FinishNOT SPECIFIED
Terminal FormUNSPECIFIED
Terminal PositionUPPER
Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON

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