BC108BDA(CHIP)
Si NPN Lo-Pwr BJT

From Zetex Semiconductors

@I(C) (A) (Test Condition)2.0m
@V(CE) (V) (Test Condition)5.0
C(obo) (Max) (F)6.0p
I(CBO) Max. (A)15n
MilitaryN
PackageChip
V(BR)CBO (V)30
V(BR)CEO (V)20
f(T) Min. (Hz) Transition Freq150M
h(FE) Max. Current gain.460
h(FE) Min. Static Current Gain180

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