{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"3V @ 250\u00b5A","Other Drawings":"ZVN4206GV_footprnt","Package \/ Case":"TO-261-4, TO-261AA","Current - Continuous Drain (Id) @ 25\u00b0C":"3.1A (Ta)","Gate Charge (Qg) @ Vgs":"5.7nC @ 10V","Product Photos":"SOT-223","PCN Design\/Specification":"Date Code Mark Update 13\/Jan\/2015 Date Code Revision 01 13\/Jan\/2015","Rds On (Max) @ Id, Vgs":"120 mOhm @ 2.5A, 10V","Datasheets":"ZXMN6A11G SERIES","FET Type":...

{"Category":"MOSFET","Maximum Drain Source Voltage":"60 V","Typical Rise Time":"3.5 ns","Typical Turn-Off Delay Time":"8.2 ns","Description":"Value","Maximum Continuous Drain Current":"4.4 A","Package":"4SOT-223","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"1.95 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"120@10V mOhm","Manufacturer":"Diodes, Inc","Typical Fall Time":"4.6 ns"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"3.1(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"60(V)","Pin Count":"3 +Tab","Packaging":"Tape and Reel","Power Dissipation":"3.9(W)","Operating Temp Range":"-55C to 150C","Package Type":"SOT-223","Rad Hardened":"No","Type":"Power MOSFET","Drain-Source On-Res":"0.12(ohm)","Number of Elements":"1"}...