{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"3V @ 250\u00b5A","Package \/ Case":"TO-243AA","Current - Continuous Drain (Id) @ 25\u00b0C":"1.9A (Ta)","Gate Charge (Qg) @ Vgs":"3.2nC @ 10V","Rds On (Max) @ Id, Vgs":"250 mOhm @ 1.8A, 10V","Product Photos":"SOT89-3L","PCN Other":"Copper Bond Wire and Wafer Source 07\/Nov\/2013","Datasheets":"ZXMN6A07Z","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"1,000","Drain to Source Voltage (Vdss)":"6...

{"Category":"MOSFET","Maximum Drain Source Voltage":"60 V","Typical Rise Time":"1.4 ns","Typical Turn-Off Delay Time":"4.9 ns","Description":"Value","Maximum Continuous Drain Current":"2.5 A","Package":"4SOT-89","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"1.8 ns","Channel Mode":"Enhancement","RDS-on":"250@10V mOhm","Manufacturer":"Diodes, Inc","Typical Fall Time":"2 ns"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Continuous Drain Current":"1.9(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"60(V)","Pin Count":"3 +Tab","Packaging":"Tape and Reel","Power Dissipation":"2.6(W)","Rad Hardened":"No","Package Type":"SOT-89","Type":"Power MOSFET","Drain-Source On-Res":"0.25(ohm)","Number of Elements":"1"}...