{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"1V @ 250\u00b5A","Other Drawings":"ZVN4206GV_footprnt","Package \/ Case":"TO-261-4, TO-261AA","Current - Continuous Drain (Id) @ 25\u00b0C":"5A (Ta)","Gate Charge (Qg) @ Vgs":"18.2nC @ 10V","Product Photos":"SOT-223","PCN Design\/Specification":"Date Code Mark Update 13\/Jan\/2015 Date Code Revision 01 13\/Jan\/2015","Rds On (Max) @ Id, Vgs":"50 mOhm @ 4.5A, 10V","Datasheets":"ZXMN4A06G","FET Type":"MOSFET N...

{"Category":"MOSFET","Maximum Drain Source Voltage":"40 V","Typical Rise Time":"4.45 ns","Typical Turn-Off Delay Time":"28.61 ns","Description":"Value","Maximum Continuous Drain Current":"7 A","Package":"4SOT-223","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"2.55 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"50@10V mOhm","Manufacturer":"Diodes, Inc","Typical Fall Time":"7.35 ns"}...

{"Polarity":"N","Continuous Drain Current":"5(A)","Mounting":"Surface Mount","Output Power (Max)":"Not Required W","Type":"Power MOSFET","Gate-Source Voltage (Max)":"'\u00b120(V)","Drain Efficiency":"Not Required %","Noise Figure":"Not Required dB","Operating Temperature Classification":"Military","Package Type":"SOT-223","Drain-Source On-Res":"0.05(ohm)","Frequency (Max)":"Not Required MHz","Power Gain ":"Not Required dB","Operating Temp Range":"-55C to 150C","Pin Count":"3 +Tab","Channel Mode":"Enhancemen...