{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.6250 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1.4 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3000 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICON...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"1V @ 250\u00b5A","Other Drawings":"SOT-23 Top","Package \/ Case":"TO-236-3, SC-59, SOT-23-3","Current - Continuous Drain (Id) @ 25\u00b0C":"1.4A (Ta)","Gate Charge (Qg) @ Vgs":"4.1nC @ 10V","Product Photos":"SOT23","Rds On (Max) @ Id, Vgs":"220 mOhm @ 910mA, 10V","Datasheets":"ZXM61N03FTC","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"3,000","Drain to Source Voltage (Vdss)":"30V","RoHS Infor...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Product Photos":"SOT23","Family":"FETs - Single","Vgs(th) (Max) @ Id":"1V @ 250\u00b5A","Series":"-","Standard Package":"10,000","Supplier Device Package":"SOT-23-3","Datasheets":"ZXM61N03FTC","Rds On (Max) @ Id, Vgs":"220 mOhm @ 910mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"625mW","Package \/ Case":"TO-236-3, SC-59, SOT-23-3","Mounting Type":"Surface Mount","Drain to Source...

{"Polarity":"N","Continuous Drain Current":"1.4(A)","Mounting":"Surface Mount","Output Power (Max)":"Not Required W","Type":"Small Signal","Gate-Source Voltage (Max)":"'\u00b120(V)","Drain Efficiency":"Not Required %","Noise Figure":"Not Required dB","Operating Temperature Classification":"Military","Package Type":"SOT-23","Drain-Source On-Res":"0.3(ohm)","Frequency (Max)":"Not Required MHz","Power Gain ":"Not Required dB","Operating Temp Range":"-55C to 150C","Pin Count":"3","Channel Mode":"Enhancement","D...