{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"1.8V @ 1mA","Other Drawings":"SOT-23-6 Pin Out","Package \/ Case":"SOT-23-6","Gate Charge (Qg) @ Vgs":"3.65nC @ 10V","Rds On (Max) @ Id, Vgs":"8.5 Ohm @ 500mA, 10V","Product Photos":"SOT-23-6","PCN Design\/Specification":"Leadframe Material Update 09\/Apr\/2014 Date Code Mark Update 13\/Jan\/2015 Date Code Revision 01 13\/Jan\/2015","PCN Other":"Copper Bond Wire and Wafer Source 07\/Nov\/2013","Datasheets":"...

{"Polarity":"N","Continuous Drain Current":"0.23(A)","Mounting":"Surface Mount","Output Power (Max)":"Not Required W","Type":"Power MOSFET","Gate-Source Voltage (Max)":"'\u00b140(V)","Drain Efficiency":"Not Required %","Noise Figure":"Not Required dB","Operating Temperature Classification":"Military","Package Type":"SOT-23","Drain-Source On-Res":"8.5(ohm)","Frequency (Max)":"Not Required MHz","Power Gain ":"Not Required dB","Operating Temp Range":"-55C to 150C","Pin Count":"6","Channel Mode":"Enhancement","...