VQ1001P-1 0.83 A, 30 V, 1 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
From Vishay Intertechnology, Inc.
| Status | Discontinued |
| Configuration | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 30 V |
| Drain Current-Max (ID) | 0.8300 A |
| Drain-source On Resistance-Max | 1 ohm |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 35 pF |
| JESD-30 Code | R-PDIP-T14 |
| Number of Elements | 4 |
| Number of Terminals | 14 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 Cel |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | IN-LINE |
| Polarity/Channel Type | N-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 3 A |
| Qualification Status | COMMERCIAL |
| Surface Mount | NO |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | DUAL |
| Transistor Element Material | SILICON |
| Turn-off Time-Max (toff) | 30 ns |
| Turn-on Time-Max (ton) | 30 ns |
