SST305
N-Channel JFET

From Vishay Siliconix

@I(D) (A) (Test Condition)1n
@V(DS) (V) (Test Condition)15
@V(GS) (V) (Test Condition)20
Absolute Max. Power Diss. (W)360m
C(iss) Max. (F)2.2p
I(DSS) Max. (A)8m
I(DSS) Min. (A)1m
I(G) Max. (A)10m
I(GSS) Max. (A)250p
MilitaryN
PackageTO-236
V(BR)GSS (V)30
V(GS)off Max. (V)3
V(GS)off Min. (V)0.5
g(fs) Max, (S) Trans. conduct,3m
g(fs) Min. (S) Trans. conduct.3m
r(DS)on Max. (Ohms)200

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