SI6467BDQ-T1-GE3 MOSFET P-CH 12V 6.8A 8TSSOP
From Vishay Siliconix
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 6.8A (Ta) |
| Datasheets | SI6467BDQ |
| Drain to Source Voltage (Vdss) | 12V |
| FET Feature | Logic Level Gate |
| FET Type | MOSFET P-Channel, Metal Oxide |
| Family | FETs - Single |
| Gate Charge (Qg) @ Vgs | 70nC @ 4.5V |
| Input Capacitance (Ciss) @ Vds | - |
| Mounting Type | Surface Mount |
| Other Names | SI6467BDQ-T1-GE3DKR |
| PCN Obsolescence/ EOL | SIL-1072014 Rev0 17/Dec/2014 |
| Package / Case | 8-TSSOP (0.173", 4.40mm Width) |
| Packaging | Digi-Reel® |
| Power - Max | 1.05W |
| Product Photos | 8-TSSOP |
| Rds On (Max) @ Id, Vgs | 12.5 mOhm @ 8A, 4.5V |
| Series | TrenchFET® |
| Standard Package | 1 |
| Supplier Device Package | 8-TSSOP |
| Vgs(th) (Max) @ Id | 850mV @ 450µA |
