P0102DL Silicon Controlled Rectifier
From TAG Semiconductors
| @I(T) (A) (Test Condition) | 1.6 |
| @Temp. (°C) (Test Condition) | 125 |
| I(D) Max. (A) Leakage Current | 0.1m |
| I(GT) Max. (A) | 200u |
| I(H) Max.(A) Holding Current | 5.0m |
| I(T) Max.(A) On-state Current | 0.2² |
| I(TSM) Max. (A) | 8.0 |
| Military | N |
| Package | TO-236 |
| V(DRM) Max.(V)Rep.Pk.Off Volt. | 400 |
| V(GT) Max.(V) | 0.8 |
| V(T) Max. (V) | 1.9 |
| dv/dt Min. (V/us) | 25 |
| t(q) Typ. (s) | 200uò |
