IRF840LCSTRLPBF
8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET

From Vishay Presicion Group

StatusACTIVE
Avalanche Energy Rating (Eas)510 mJ
Case ConnectionDRAIN
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min500 V
Drain Current-Max (ID)8 A
Drain-source On Resistance-Max0.8500 ohm
EU RoHS CompliantYes
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Lead FreeYes
Mfr Package DescriptionLEAD FREE, PLASTIC, D2PAK-3
Number of Elements1
Number of Terminals2
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeSQUARE
Package StyleSMALL OUTLINE
Power Dissipation Ambient-Max3.1 W
Pulsed Drain Current-Max (IDM)28 A
Surface MountYes
Terminal FinishMATTE TIN
Terminal FormGULL WING
Terminal PositionSINGLE
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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