FESB16DTHE3/81 DIODE GEN PURP 200V 16A TO263AB
From Vishay Semiconductor Diodes Division
| Capacitance @ Vr, F | 175pF @ 4V, 1MHz |
| Category | Discrete Semiconductor Products |
| Current - Average Rectified (Io) | 16A |
| Current - Reverse Leakage @ Vr | 10µA @ 200V |
| Datasheets | FES(F,B)16AT - 16JT Packaging Information |
| Diode Type | Standard |
| Family | Diodes, Rectifiers - Single |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | -65°C ~ 150°C |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Packaging | Tape & Reel (TR) |
| Product Photos | TO-263 |
| Reverse Recovery Time (trr) | 35ns |
| Series | - |
| Speed | Fast Recovery = 200mA (Io) |
| Standard Package | 800 |
| Supplier Device Package | TO-263AB |
| Voltage - DC Reverse (Vr) (Max) | 200V |
| Voltage - Forward (Vf) (Max) @ If | 975mV @ 16A |
