EGL41BHE3/97
DIODE GEN PURP 100V 1A DO213AB

From Vishay Semiconductor Diodes Division

Capacitance @ Vr, F20pF @ 4V, 1MHz
CategoryDiscrete Semiconductor Products
Current - Average Rectified (Io)1A
Current - Reverse Leakage @ Vr5µA @ 100V
DatasheetsBYM12-50 - 12-400, EGL41A - 41G Packaging Information
Diode TypeStandard
FamilyDiodes, Rectifiers - Single
Mounting TypeSurface Mount
Operating Temperature - Junction-65°C ~ 175°C
Package / CaseDO-213AB, MELF (Glass)
PackagingTape & Reel (TR)
Product PhotosDO-213AB
Reverse Recovery Time (trr)50ns
SeriesSUPERECTIFIER®
SpeedFast Recovery = 200mA (Io)
Standard Package5,000
Supplier Device PackageDO-213AB
Voltage - DC Reverse (Vr) (Max)100V
Voltage - Forward (Vf) (Max) @ If1V @ 1A

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