BY399P-E3/54 DIODE GEN PURP 800V 3A DO201AD
From Vishay Semiconductor Diodes Division
Capacitance @ Vr, F | 28pF @ 4V, 1MHz |
Category | Discrete Semiconductor Products |
Current - Average Rectified (Io) | 3A |
Current - Reverse Leakage @ Vr | 10µA @ 800V |
Datasheets | BY396P thru BY399P |
Diode Type | Standard |
Family | Diodes, Rectifiers - Single |
Mounting Type | Through Hole |
Operating Temperature - Junction | -50°C ~ 125°C |
Other Names | BY399P-E3/54GICT |
PCN Obsolescence/ EOL | DD-017-2013-Rev-0 09/Dec/2013 |
Package / Case | DO-201AD, Axial |
Packaging | Cut Tape (CT) |
Product Photos | SB540-E3/51 DO-201AD, C-16, Axial |
Reverse Recovery Time (trr) | 500ns |
Series | - |
Speed | Fast Recovery = 200mA (Io) |
Standard Package | 1 |
Supplier Device Package | DO-201AD |
Voltage - DC Reverse (Vr) (Max) | 800V |
Voltage - Forward (Vf) (Max) @ If | 1.25V @ 3A |