VN10LF
N-Channel Enhancement MOSFET

From Various

@I(D) (A) (Test Condition)500m
@V(DS) (V) (Test Condition)15
Absolute Max. Power Diss. (W)250m
C(iss) Max. (F)60p
I(D) Abs. Drain Current (A)150m
I(DSS) Min. (A)10u
I(GSS) Max. (A)100n
MilitaryN
PackageSOT-23
V(BR)DSS (V)60
g(fs) Min. (S) Trans. conduct.100m
r(DS)on Max. (Ohms)7.5

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