T290F1200EEB Silicon Controlled Rectifier
From Various
@ t(w) (s) (Test Condition) | 10m |
@I(T) (A) (Test Condition) | 1k |
@Temp. (°C) (Test Condition) | 125 |
I(D) Max. (A) Leakage Current | 50m |
I(GT) Max. (A) | 250m |
I(H) Max.(A) Holding Current | 250m |
I(T) Max.(A) On-state Current | 290± |
I(TSM) Max. (A) | 6.4k |
Military | N |
Package | FBASE-F-BD54 |
V(DRM) Max.(V)Rep.Pk.Off Volt. | 1.2k |
V(GT) Max.(V) | 2.2 |
V(T) Max. (V) | 2.1 |
dv/dt Min. (V/us) | 50 |
t(q) Typ. (s) | 20uò |