IRF831R
N-Channel Enhancement MOSFET

From Various

@(VDS) (V) (Test Condition)20
@Freq. (Hz) (Test Condition)1M
@I(D) (A) (Test Condition)2.5
@Temp (°C) (Test Condition)25
@V(DS) (V) (Test Condition)25
@V(GS) (V) (Test Condition)10
Absolute Max. Power Diss. (W)75
C(iss) Max. (F)600p
I(D) Abs. Drain Current (A)4.5
I(D) Abs. Max.(A) Drain Curr.3.0
I(DM) Max (A)(@25°C)18
I(DSS) Max. (A)250u
I(GSS) Max. (A)100n
MilitaryN
PackageTO-220AB
Thermal Resistance Junc-Amb.80
V(BR)DSS (V)450
V(BR)GSS (V)20
V(GS)th Max. (V)4
V(GS)th Min. (V)2
g(fs) Max, (S) Trans. conduct,4.2
g(fs) Min. (S) Trans. conduct.2.7
r(DS)on Max. (Ohms)1.5
t(d)off Max. (s) Off time53n
t(f) Max. (s) Fall time.23n
t(r) Max. (s) Rise time23n
td(on) Max (s) On time delay17n

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