2N6966
N-Channel Enhancement MOSFET

From Various

@(VDS) (V) (Test Condition)30
@I(D) (A) (Test Condition)3.0
@V(DS) (V) (Test Condition)15
Absolute Max. Power Diss. (W)70
C(iss) Max. (F)1.8p
I(D) Abs. Drain Current (A)20
I(DSS) Min. (A)250u
I(GSS) Max. (A)100n
MilitaryN
PackageTO-213AA
V(BR)DSS (V)100
V(BR)GSS (V)30
g(fs) Min. (S) Trans. conduct.6.0
r(DS)on Max. (Ohms)85m
t(f) Max. (s) Fall time.30n
t(r) Max. (s) Rise time60n

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