2N6961A
N-Channel Enhancement MOSFET

From Various

@I(D) (A) (Test Condition)2.5
@V(DS) (V) (Test Condition)25
Absolute Max. Power Diss. (W)125
C(iss) Max. (F)3.5n
I(D) Abs. Drain Current (A)5.3
I(DSS) Min. (A)4.0m
I(GSS) Max. (A)100n
MilitaryN
PackageTO-204AA
V(BR)DSS (V)1.0k
g(fs) Max, (S) Trans. conduct,2.0
g(fs) Min. (S) Trans. conduct.1.4
r(DS)on Max. (Ohms)2.0
t(f) Max. (s) Fall time.100n
t(r) Max. (s) Rise time140n

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