Product Datasheet Search Results:

VP2450N3-G.pdf1 Pages, 256 KB, Original
VP2450N3.pdf4 Pages, 93 KB, Original
VP2450N3
Supertex, Inc.
P-Channel Enhancement-Mode Vertical DMOS FETs
VP2450N3-G.pdf6 Pages, 852 KB, Original
VP2450N3G.pdf14 Pages, 1088 KB, Original
VP2450N3G
Supertex
Trans MOSFET P-CH Si 500V 0.1A 3-Pin TO-92 Bag

Product Details Search Results:

Microchip.com/VP2450N3-G
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Online Catalog":"P-Channel Logic Level Gate FETs","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"FETs - Single","Vgs(th) (Max) @ Id":"3.5V @ 1mA","Series":"-","Package / Case":"TO-226-3, TO-92-3 (TO-226AA)","Supplier Device Package":"TO-92-3","Datasheets":"VP2450","Rds On (Max) @ Id, Vgs":"30 Ohm @ 100mA, 10V","FET Type":"MOSFET P-Channel, Metal Oxide","Packaging":"Bulk","Power - Max":"740mW","Standard Package":"...
1792 Bytes - 01:06:37, 27 November 2024
Microchip.com/VP2450N3-G P002
{"Factory Pack Quantity":"2000","Vds - Drain-Source Breakdown Voltage":"- 500 V","Transistor Polarity":"P-Channel","Minimum Operating Temperature":"- 55 C","Channel Mode":"Enhancement","Vgs - Gate-Source Breakdown Voltage":"20 V","Brand":"Microchip Technology","Id - Continuous Drain Current":"- 100 mA","Mounting Style":"Through Hole","Pd - Power Dissipation":"1 W","Packaging":"Reel","Rise Time":"25 ns","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"35 Ohms","Package / Case":"TO-92-3","Typic...
1616 Bytes - 01:06:37, 27 November 2024
Microchip.com/VP2450N3-G P003
{"Factory Pack Quantity":"2000","Vds - Drain-Source Breakdown Voltage":"- 500 V","Transistor Polarity":"P-Channel","Minimum Operating Temperature":"- 55 C","Channel Mode":"Enhancement","Vgs - Gate-Source Breakdown Voltage":"20 V","Brand":"Microchip Technology","Id - Continuous Drain Current":"- 100 mA","Mounting Style":"Through Hole","Pd - Power Dissipation":"1 W","Packaging":"Reel","Rise Time":"25 ns","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"35 Ohms","Package / Case":"TO-92-3","Typic...
1709 Bytes - 01:06:37, 27 November 2024
Microchip.com/VP2450N3-G P005
{"Factory Pack Quantity":"2000","Vds - Drain-Source Breakdown Voltage":"- 500 V","Transistor Polarity":"P-Channel","Channel Mode":"Enhancement","Brand":"Microchip Technology","Id - Continuous Drain Current":"- 100 mA","Mounting Style":"Through Hole","Packaging":"Reel","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"35 Ohms","Package / Case":"TO-92-3","RoHS":"Details","Manufacturer":"Microchip"}...
1354 Bytes - 01:06:37, 27 November 2024
Microchip.com/VP2450N3-G P013
{"Factory Pack Quantity":"2000","Vds - Drain-Source Breakdown Voltage":"- 500 V","Transistor Polarity":"P-Channel","Minimum Operating Temperature":"- 55 C","Channel Mode":"Enhancement","Vgs - Gate-Source Breakdown Voltage":"20 V","Brand":"Microchip Technology","Id - Continuous Drain Current":"- 100 mA","Mounting Style":"Through Hole","Pd - Power Dissipation":"1 W","Packaging":"Reel","Rise Time":"25 ns","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"35 Ohms","Package / Case":"TO-92-3","Typic...
1616 Bytes - 01:06:37, 27 November 2024
Microchip.com/VP2450N3-G P014
{"Factory Pack Quantity":"2000","Vds - Drain-Source Breakdown Voltage":"- 500 V","Transistor Polarity":"P-Channel","Minimum Operating Temperature":"- 55 C","Channel Mode":"Enhancement","Vgs - Gate-Source Breakdown Voltage":"20 V","Brand":"Microchip Technology","Id - Continuous Drain Current":"- 100 mA","Mounting Style":"Through Hole","Pd - Power Dissipation":"1 W","Packaging":"Reel","Rise Time":"25 ns","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"35 Ohms","Package / Case":"TO-92-3","Typic...
1616 Bytes - 01:06:37, 27 November 2024
Microchip.com/VP2450N3-G
586 Bytes - 01:06:37, 27 November 2024
Supertex.com/VP2450N3
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","JESD-609 Code":"e0","Package Shape":"ROUND","Additional Feature":"HIGH INPUT IMPEDANCE","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1000 A","Feedback Cap-Max (Crss)":"20 pF","Sub Category":"Other Transistors","Peak Reflow Temperature (Cel)":"NOT SPECIFIED","Configuration":"SINGLE WITH BU...
1831 Bytes - 01:06:37, 27 November 2024
Supertex.com/VP2450N3-G
{"Terminal Finish":"MATTE TIN","Terminal Form":"WIRE","Qualification Status":"COMMERCIAL","JESD-609 Code":"e3","Package Shape":"ROUND","Status":"Active","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1000 A","Feedback Cap-Max (Crss)":"20 pF","EU RoHS Compliant":"Yes","Peak Reflow Temperature (Cel)":"NOT SPECIFIED","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"30 ohm","Moisture Sensitivity Level":"NOT APPLICABLE","D...
1709 Bytes - 01:06:37, 27 November 2024
Supertex.com/VP2450N3G
{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"0.1(A)","Mounting":"Through Hole","Drain-Source On-Volt":"500(V)","Pin Count":"3","Packaging":"Bag","Power Dissipation":"0.74(W)","Operating Temp Range":"-55C to 150C","Package Type":"TO-92","Rad Hardened":"No","Type":"Power MOSFET","Drain-Source On-Res":"30(ohm)","Number of Elements":"1"}...
1496 Bytes - 01:06:37, 27 November 2024
Supertex.com/VP2450N3-GP002
556 Bytes - 01:06:37, 27 November 2024
Supertex.com/VP2450N3-GP003
555 Bytes - 01:06:37, 27 November 2024

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