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Supertex.com/VP1306N3P005
{"Terminal Form":"THROUGH-HOLE","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"25 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"60 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface Mou...
1478 Bytes - 07:07:07, 17 November 2024
Documentation and Support
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FGESB-20-P005NA.pdf | 1.59 | 1 | Request | |
1BP005_31130_4F_DWG.pdf | 0.10 | 1 | Request | |
1BP005_31240_4F_DWG.pdf | 0.10 | 1 | Request | |
7B6JP00541.pdf | 0.04 | 1 | Request | |
NBT_400225P0055.pdf | 0.04 | 1 | Request | |
7B6JP00508.pdf | 0.04 | 1 | Request | |
7B6JP00587.pdf | 0.04 | 1 | Request | |
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7B6JP00584.pdf | 0.04 | 1 | Request |