Product Datasheet Search Results:
4 Pages, 27 KB, Original- VP1306N3
- Supertex, Inc.
- P-Channel Enhancement-Mode Vertical DMOS FET
Product Details Search Results:
Supertex.com/VP1306N3
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","JESD-609 Code":"e0","Package Shape":"ROUND","Additional Feature":"HIGH INPUT IMPEDANCE","Status":"Discontinued","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1500 A","Feedback Cap-Max (Crss)":"5 pF","Sub Category":"Other Transistors","Peak Reflow Temperature (Cel)":"NOT SPECIFIED","Con...
1842 Bytes - 07:09:22, 17 November 2024
Supertex.com/VP1306N3P001
{"Terminal Form":"THROUGH-HOLE","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"25 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"60 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface Mou...
1480 Bytes - 07:09:22, 17 November 2024
Supertex.com/VP1306N3P002
{"Terminal Form":"THROUGH-HOLE","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"25 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"60 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface Mou...
1478 Bytes - 07:09:22, 17 November 2024
Supertex.com/VP1306N3P003
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Additional Feature":"HIGH INPUT IMPEDANCE","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"25 ohm","Feedback Cap-Max (Crss)":"5 pF","DS Breakdown Voltage-Min":"60 V","FET T...
1597 Bytes - 07:09:22, 17 November 2024
Supertex.com/VP1306N3P004
{"Terminal Form":"THROUGH-HOLE","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"25 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"60 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface Mou...
1477 Bytes - 07:09:22, 17 November 2024
Supertex.com/VP1306N3P005
{"Terminal Form":"THROUGH-HOLE","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"25 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"60 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface Mou...
1478 Bytes - 07:09:22, 17 November 2024
Supertex.com/VP1306N3P006
{"Terminal Form":"THROUGH-HOLE","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"25 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"60 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface Mou...
1478 Bytes - 07:09:22, 17 November 2024
Supertex.com/VP1306N3P007
{"Terminal Form":"THROUGH-HOLE","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"25 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"60 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface Mou...
1480 Bytes - 07:09:22, 17 November 2024
Supertex.com/VP1306N3P008
{"Terminal Form":"THROUGH-HOLE","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"25 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"60 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface Mou...
1480 Bytes - 07:09:22, 17 November 2024
Supertex.com/VP1306N3P011
{"Terminal Form":"THROUGH-HOLE","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"25 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"60 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface Mou...
1480 Bytes - 07:09:22, 17 November 2024
Supertex.com/VP1306N3P012
{"Terminal Form":"THROUGH-HOLE","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"25 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"60 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface Mou...
1480 Bytes - 07:09:22, 17 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| IPP024N06N3G.pdf | 0.47 | 1 | Request | |
| IPP093N06N3G.pdf | 0.67 | 1 | Request | |
| IPP260N06N3G.pdf | 0.67 | 1 | Request | |
| IPD250N06N3G.pdf | 0.60 | 1 | Request | |
| IPD034N06N3G.pdf | 0.42 | 1 | Request | |
| IPI040N06N3G.pdf | 0.97 | 1 | Request | |
| IPB017N06N3G.pdf | 0.64 | 1 | Request | |
| IPB054N06N3G.pdf | 0.67 | 1 | Request | |
| IPI024N06N3G.pdf | 0.47 | 1 | Request | |
| IPB021N06N3G.pdf | 0.47 | 1 | Request | |
| IPA032N06N3G.pdf | 0.53 | 1 | Request | |
| IPD053N06N3G.pdf | 0.60 | 1 | Request |
