Product Datasheet Search Results:

VP0104N3-G.pdf1 Pages, 256 KB, Original
VP0104N3.pdf1 Pages, 119 KB, Scan
VP0104N3
N/a
Semiconductor Master Cross Reference Guide
VP0104N3.pdf4 Pages, 41 KB, Original
VP0104N3
Supertex, Inc.
P-Channel Enhancement-Mode Vertical DMOS FET
VP0104N3-G.pdf5 Pages, 619 KB, Original

Product Details Search Results:

Americanmicrosemi.com/VP0104N3
{"Status":"Active"}...
716 Bytes - 23:21:15, 17 November 2024
Microchip.com/VP0104N3
{"Status":"Discontinued","Operating Mode":"ENHANCEMENT MODE","Polarity/Channel Type":"P-CHANNEL","Power Dissipation-Max (Abs)":"1 W","Operating Temperature-Max":"150 Cel","Drain Current-Max (Abs) (ID)":"0.2500 A","Sub Category":"Other Transistors","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Configuration":"Single","Surface Mount":"NO"}...
1053 Bytes - 23:21:15, 17 November 2024
Microchip.com/VP0104N3-G
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Online Catalog":"P-Channel Standard FETs","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"FETs - Single","Vgs(th) (Max) @ Id":"3.5V @ 1mA","Series":"-","Package / Case":"TO-226-3, TO-92-3 (TO-226AA)","Supplier Device Package":"TO-92-3","Datasheets":"VP0104","Rds On (Max) @ Id, Vgs":"8 Ohm @ 500mA, 10V","FET Type":"MOSFET P-Channel, Metal Oxide","Packaging":"Bulk","Power - Max":"1W","Standard Package":"1,000","PCN ...
1781 Bytes - 23:21:15, 17 November 2024
Microchip.com/VP0104N3-G P002
{"Factory Pack Quantity":"2000","Vds - Drain-Source Breakdown Voltage":"- 40 V","Transistor Polarity":"P-Channel","Minimum Operating Temperature":"- 55 C","Channel Mode":"Enhancement","Vgs - Gate-Source Breakdown Voltage":"20 V","Brand":"Microchip Technology","Id - Continuous Drain Current":"- 250 mA","Mounting Style":"Through Hole","Pd - Power Dissipation":"1 W","Packaging":"Reel","Rise Time":"3 ns","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"15 Ohms","Package / Case":"TO-92-3","Typical...
1612 Bytes - 23:21:15, 17 November 2024
Microchip.com/VP0104N3-G P003
{"Factory Pack Quantity":"2000","Vds - Drain-Source Breakdown Voltage":"- 40 V","Transistor Polarity":"P-Channel","Minimum Operating Temperature":"- 55 C","Channel Mode":"Enhancement","Vgs - Gate-Source Breakdown Voltage":"20 V","Brand":"Microchip Technology","Id - Continuous Drain Current":"- 250 mA","Mounting Style":"Through Hole","Pd - Power Dissipation":"1 W","Packaging":"Reel","Rise Time":"3 ns","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"15 Ohms","Package / Case":"TO-92-3","Typical...
1674 Bytes - 23:21:15, 17 November 2024
Microchip.com/VP0104N3-G P005
{"Factory Pack Quantity":"2000","Vds - Drain-Source Breakdown Voltage":"- 40 V","Transistor Polarity":"P-Channel","Channel Mode":"Enhancement","Brand":"Microchip Technology","Id - Continuous Drain Current":"- 250 mA","Mounting Style":"Through Hole","Packaging":"Reel","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"15 Ohms","Package / Case":"TO-92-3","RoHS":"Details","Manufacturer":"Microchip"}...
1419 Bytes - 23:21:15, 17 November 2024
Microchip.com/VP0104N3-G P013
{"Factory Pack Quantity":"2000","Vds - Drain-Source Breakdown Voltage":"- 40 V","Transistor Polarity":"P-Channel","Minimum Operating Temperature":"- 55 C","Channel Mode":"Enhancement","Vgs - Gate-Source Breakdown Voltage":"20 V","Brand":"Microchip Technology","Id - Continuous Drain Current":"- 250 mA","Mounting Style":"Through Hole","Pd - Power Dissipation":"1 W","Packaging":"Reel","Rise Time":"3 ns","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"15 Ohms","Package / Case":"TO-92-3","Typical...
1674 Bytes - 23:21:15, 17 November 2024
Microchip.com/VP0104N3-G P014
{"Factory Pack Quantity":"2000","Vds - Drain-Source Breakdown Voltage":"- 40 V","Transistor Polarity":"P-Channel","Minimum Operating Temperature":"- 55 C","Channel Mode":"Enhancement","Vgs - Gate-Source Breakdown Voltage":"20 V","Brand":"Microchip Technology","Id - Continuous Drain Current":"- 250 mA","Mounting Style":"Through Hole","Pd - Power Dissipation":"1 W","Packaging":"Reel","Rise Time":"3 ns","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"15 Ohms","Package / Case":"TO-92-3","Typical...
1611 Bytes - 23:21:15, 17 November 2024
Microchip.com/VP0104N3-G
583 Bytes - 23:21:15, 17 November 2024
Supertex.com/VP0104N3
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","JESD-609 Code":"e0","Package Shape":"ROUND","Additional Feature":"HIGH INPUT IMPEDANCE","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Drain Current-Max (Abs) (ID)":"0.2500 A","Sub Category":"Other Transistors","Peak Reflow Temperature (Cel)":"NOT SPECIFIED","Configuration":"SINGLE...
1870 Bytes - 23:21:15, 17 November 2024
Supertex.com/VP0104N3-G
{"Terminal Finish":"MATTE TIN","Terminal Form":"THROUGH-HOLE","Qualification Status":"COMMERCIAL","JESD-609 Code":"e3","Package Shape":"ROUND","Status":"Active","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Feedback Cap-Max (Crss)":"8 pF","EU RoHS Compliant":"Yes","Peak Reflow Temperature (Cel)":"NOT SPECIFIED","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"8 ohm","Moisture Sensitivity Level":"NOT APPLICAB...
1711 Bytes - 23:21:15, 17 November 2024
Supertex.com/VP0104N3G
{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"0.25(A)","Mounting":"Through Hole","Drain-Source On-Volt":"40(V)","Pin Count":"3","Packaging":"Bag","Power Dissipation":"1(W)","Operating Temp Range":"-55C to 150C","Package Type":"TO-92","Rad Hardened":"No","Type":"Power MOSFET","Drain-Source On-Res":"8(ohm)","Number of Elements":"1"}...
1485 Bytes - 23:21:15, 17 November 2024

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