Datasheet.Directory

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 1mA","Series":"-","Package / Case":"TO-226-3, TO-92-3 (TO-226AA)","Supplier Device Package":"TO-92-3","Datasheets":"VN2450","Rds On (Max) @ Id, Vgs":"13 Ohm @ 400mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Bulk","Power - Max":"1W","Standard Package":"1,000","PCN Assembly/Origin":"Fab Site Addition 14/Aug/2...

{"Factory Pack Quantity":"2000","Vds - Drain-Source Breakdown Voltage":"500 V","Transistor Polarity":"N-Channel","Minimum Operating Temperature":"- 55 C","Channel Mode":"Enhancement","Vgs - Gate-Source Breakdown Voltage":"20 V","Brand":"Microchip Technology","Id - Continuous Drain Current":"200 mA","Mounting Style":"Through Hole","Pd - Power Dissipation":"1 W","Packaging":"Reel","Rise Time":"10 ns","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"20 Ohms","Package / Case":"TO-92-3","Typical T...

{"Factory Pack Quantity":"2000","Vds - Drain-Source Breakdown Voltage":"500 V","Transistor Polarity":"N-Channel","Minimum Operating Temperature":"- 55 C","Channel Mode":"Enhancement","Vgs - Gate-Source Breakdown Voltage":"20 V","Brand":"Microchip Technology","Id - Continuous Drain Current":"200 mA","Mounting Style":"Through Hole","Pd - Power Dissipation":"1 W","Packaging":"Reel","Rise Time":"10 ns","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"20 Ohms","Package / Case":"TO-92-3","Typical T...

{"Factory Pack Quantity":"2000","Vds - Drain-Source Breakdown Voltage":"500 V","Transistor Polarity":"N-Channel","Channel Mode":"Enhancement","Brand":"Microchip Technology","Id - Continuous Drain Current":"200 mA","Mounting Style":"Through Hole","Packaging":"Reel","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"20 Ohms","Package / Case":"TO-92-3","RoHS":"Details","Manufacturer":"Microchip"}...

{"Factory Pack Quantity":"2000","Vds - Drain-Source Breakdown Voltage":"500 V","Transistor Polarity":"N-Channel","Minimum Operating Temperature":"- 55 C","Channel Mode":"Enhancement","Vgs - Gate-Source Breakdown Voltage":"20 V","Brand":"Microchip Technology","Id - Continuous Drain Current":"200 mA","Mounting Style":"Through Hole","Pd - Power Dissipation":"1 W","Packaging":"Reel","Rise Time":"10 ns","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"20 Ohms","Package / Case":"TO-92-3","Typical T...

{"Factory Pack Quantity":"2000","Vds - Drain-Source Breakdown Voltage":"500 V","Transistor Polarity":"N-Channel","Minimum Operating Temperature":"- 55 C","Channel Mode":"Enhancement","Vgs - Gate-Source Breakdown Voltage":"20 V","Brand":"Microchip Technology","Id - Continuous Drain Current":"200 mA","Mounting Style":"Through Hole","Pd - Power Dissipation":"1 W","Packaging":"Reel","Rise Time":"10 ns","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"20 Ohms","Package / Case":"TO-92-3","Typical T...

{"Terminal Finish":"TIN LEAD","Terminal Form":"WIRE","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","JESD-609 Code":"e0","Package Shape":"ROUND","Additional Feature":"LOW THRESHOLD","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2000 A","Feedback Cap-Max (Crss)":"25 pF","Sub Category":"FET General Purpose Power","Peak Reflow Temperature (Cel)":"NOT SPECIFIED","Configuration":"SINGLE WITH BUILT-IN ...

{"Status":"Active","JEDEC-95 Code":"TO-92","Terminal Finish":"NOT SPECIFIED","Mfr Package Description":"GREEN PACKAGE-3","Terminal Form":"THROUGH-HOLE","Time@Peak Reflow Temperature-Max (s)":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Package Shape":"ROUND","Package Style":"CYLINDRICAL","REACH Compliant":"Yes","Qualification Status":"COMMERCIAL","JESD-30 Code":"O-PBCY-T3","EU RoHS Compliant":"Yes","Terminal Position":"BOTTOM","Peak Reflow Temperature (Cel)":"260","Moisture Sensitivity Level":"N...

{"Polarity":"N","Packaging":"Bag","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"0.2(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"500(V)","Drain-Source On-Res":"13(ohm)","Power Dissipation":"1(W)","Operating Temp Range":"-55C to 150C","Package Type":"TO-92","Type":"Power MOSFET","Pin Count":"3","Number of Elements":"1"}...