{"Terminal Form":"WIRE","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Additional Feature":"LOW THRESHOLD","Status":"Transferred","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2300 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"6 ohm","JESD-30 Code":"O-PBCY-W3","DS Breakdown Voltage-Min":"120 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface Mount":"NO",...

{"Terminal Form":"WIRE","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Additional Feature":"LOW THRESHOLD","Status":"Discontinued","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2300 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"6 ohm","JESD-30 Code":"O-PBCY-W3","DS Breakdown Voltage-Min":"120 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Applica...

{"Terminal Form":"THROUGH-HOLE","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2300 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"6 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"120 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Surface Mount":"NO","Operating Mode":"ENHANCEME...