Product Details Search Results:

Supertex.com/VN0655N3P008
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"20 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"550 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transisto...
1519 Bytes - 04:21:16, 17 November 2024

Documentation and Support

Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:

File NameFile Size (MB)DocumentMOQSupport
1BP008_11014_001_4F_DWG.pdf0.121Request
7GSP008628R0006.pdf0.141Request
7B6JP00800.pdf0.041Request
7GSP008989R0006.pdf0.141Request
7GSP008377R0006.pdf0.081Request
7GSP008530R0006.pdf0.151Request
7GSP008785R0006.pdf0.141Request
7GSP008838R0006.pdf0.141Request
7GSP008880R0006.pdf0.141Request
7GSP008759R0006.pdf0.141Request
7GSP008795R0006.pdf0.141Request
7GSP008555R0006.pdf0.151Request