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Supertex.com/VN0655N3P002
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"20 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"550 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transisto...
1519 Bytes - 05:10:45, 17 November 2024
Documentation and Support
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| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| UTAP002.pdf | 13.79 | 1 | Request | |
| 6RP0020-2AC32-5AA0.pdf | 15.16 | 1 | Request | |
| 1BP002_11010_003_DWG.pdf | 0.05 | 1 | Request | |
| 1BP002_11010_002_DWG.pdf | 0.05 | 1 | Request | |
| 1BP002_11010_001_DWG.pdf | 0.06 | 1 | Request | |
| G_303361P0022.pdf | 0.04 | 1 | Request | |
| 1VDP002121R0001.pdf | 0.13 | 1 | Request | |
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| 7B6JP00209.pdf | 0.04 | 1 | Request | |
| 1VDP002394P0001.pdf | 0.08 | 1 | Request | |
| 4GAADAP002I1000.pdf | 0.04 | 1 | Request |
